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NDS9407_02 Datasheet

  • NDS9407_02

  • 60V P-Channel PowerTrench MOSFET

  • 5頁

  • FAIRCHILD

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NDS9407
May 2002
NDS9407
60V P-Channel PowerTrench
餂?/div>
MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor鈥檚 advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V 鈥?20V).
Features
鈥?/div>
鈥?.0 A, 鈥?0 V.
R
DS(ON)
= 150 m鈩?@ V
GS
= 鈥?0 V
R
DS(ON)
= 240 m鈩?@ V
GS
= 鈥?.5 V
鈥?/div>
Low gate charge
鈥?/div>
Fast switching speed
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
High power and current handling capability
Applications
鈥?/div>
Power management
鈥?/div>
Load switch
鈥?/div>
Battery protection
D
D
D
D
SO-8
D
D
D
D
5
6
7
4
3
2
1
Pin 1
SO-8
G
S
G
S
S
S
S
S
T
A
=25
o
C unless otherwise noted
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Maximum Power Dissipation
Parameter
Ratings
鈥?0
鹵20
(Note 1a)
Units
V
V
A
W
鈥?.0
鈥?2
2.5
1.2
1.0
鈥?5 to +175
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
擄C/W
Package Marking and Ordering Information
Device Marking
NDS9407
餂?002
Fairchild Semiconductor Corporation
Device
NDS9407
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
NDS9407 Rev B1(W)

NDS9407_02相關(guān)型號PDF文件下載

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