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NDS8963 Datasheet

  • NDS8963

  • Dual N-Channel Enhancement Mode Field Effect Transistor

  • 2頁

  • NSC

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N
September 1996
ADVANCE INFORMATION
NDS8963
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field
effect transistors are produced using National's
proprietary, high cell density, DMOS technology.
This very high density process is especially tailored
to minimize on-state resistance and provide superior
switching
performance.
These
devices
are
particularly suited for low voltage applications such
as DC motor control and DC/DC conversion where
fast switching, low in-line power loss, and resistance
to transients are needed.
Features
2.5A, 30V. R
DS(ON)
= 0.16
鈩?/div>
@ V
GS
= 10V
R
DS(ON)
= 0.25
鈩?/div>
@ V
GS
= 4.5V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a
widely used surface mount package.
Dual MOSFET in surface mount package.
_______________________________________________________________________________________________
5
6
7
8
4
3
2
1
Absolute Maximum Ratings
Symbol Parameter
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
T
A
= 25擄C unless otherwise note
NDS8963
30
鹵20
(Note 1a)
Units
V
V
A
2.5
7.5
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
1.6
1
0.9
-55 to 150
擄C
T
J
,T
STG
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R
胃
JA
R
胃
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
Thermal Resistance, Junction-to-Case
(Note 1)
78
40
擄C/W
擄C/W
NDS8963 Rev. A

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