NDS8947 Datasheet

IC型號(hào)：
NDS8947
PDF描述：
Dual P-Channel Enhancement Mode Field Effect Transistor
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332.67KB
PDF頁數(shù)：
10頁
芯片廠家：
FAIRCHILD

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March 1996

NDS8947

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance and provide

superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer

power management and other battery powered circuits where

fast switching, low in-line power loss, and resistance to

transients are needed.

Features

-4A, -30V. R

DS(ON)

= 0.065

鈩?/div>

@ V

= -10V

DS(ON)

= 0.1

鈩?/div>

@ V

= -4.5V.

High density cell design for extremely low R

DS(ON)

High power and current handling capability in a widely used

surface mount package.

Dual MOSFET in surface mount package.

________________________________________________________________________________

Absolute Maximum Ratings

Symbol

DSS

GSS

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

= 25擄C unless otherwise noted

NDS8947

-30

-20

(Note 1a)

Units

- Continuous

- Pulsed

-4

-15

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

1.6

0.9

-55 to 150

擄C

STG

Operating and Storage Temperature Range

THERMAL CHARACTERISTICS

胃

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

擄C/W

漏 1997 Fairchild Semiconductor Corporation

NDS8947.SAM

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power ProcessingSMPS Power Switch
標(biāo)準(zhǔn)包裝
2,500
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 陣列
系列
-
FET 型
2 個(gè) P 溝道（雙）
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
4A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
65 毫歐 @ 4A，10V
Id 時(shí)的 Vgs(th)（最大）
2.8V @ 250µA
閘電荷(Qg) @ Vgs
30nC @ 10V
輸入電容 (Ciss) @ Vds
690pF @ 15V
功率 - 最大
900mW
安裝類型
表面貼裝
封裝/外殼
8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝
8-SOICN
包裝
帶卷 (TR)
其它名稱
NDS8947TR

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