NDS8858H Datasheet

IC型號(hào)：
NDS8858H
PDF描述：
Complementry MOSFET Half Bridge
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PDF頁(yè)數(shù)：
12頁(yè)
芯片廠(chǎng)家：
FAIRCHILD

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July 1996

NDS8858H

Complementary MOSFET Half Bridge

General Description

These Complementary MOSFET half bridge devices are

produced using Fairchild's proprietary, high cell density,

DMOS technology. This very high density process is

especially tailored to minimize on-state resistance, provide

superior switching performance, and withstand high energy

pulses in the avalanche and commutation modes. These

devices are particularly suited for low voltage half bridge

applications or CMOS applications when both gates are

connected together.

Features

N-Channel 6.3A, 30V, R

DS(ON)

=0.035

鈩?/div>

@ V

=10V.

P-Channel -4.8A, -30V, R

DS(ON)

=0.065

鈩?/div>

@ V

=-10V.

High density cell design or extremely low R

DS(ON)

High power and current handling capability in a widely used

surface mount package.

Matched pair for equal input capacitance and power capability

________________________________________________________________________________

V+

P-Gate

Vout

N -Gate

Vout

V-

Absolute Maximum Ratings

Symbol

DSS

GSS

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

Maximum Power Dissipation

(Single Device)

STG

= 25擄C unless otherwise noted

N-Channel

(Note 1a &2)

P-Channel

-30

-20

-4.8

2.5

1.2

-55 to 150

Units

6.3

(Note 1a)

(Note 1b)

(Note 1c)

Operating and Storage Temperature Range

擄C

THERMAL CHARACTERISTICS

胃

Thermal Resistance, Junction-to-Ambient

(Single Device)

(Note 1a)

Thermal Resistance, Junction-to-Case

(Single Device)

(Note 1a)

擄C/W

漏 1997 Fairchild Semiconductor Corporation

NDS8858H Rev. C

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power ProcessingSMPS Power Switch
標(biāo)準(zhǔn)包裝
2,500
類(lèi)別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 陣列
系列
-
FET 型
N 和 P 溝道
FET 特點(diǎn)
邏輯電平門(mén)
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
6.3A，4.8A
開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C
35 毫歐 @ 4.8A，10V
Id 時(shí)的 Vgs(th)（最大）
2.8V @ 250µA
閘電荷(Qg) @ Vgs
30nC @ 10V
輸入電容 (Ciss) @ Vds
720pF @ 15V
功率 - 最大
1W
安裝類(lèi)型
表面貼裝
封裝/外殼
8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝
8-SOICN
包裝
帶卷 (TR)
其它名稱(chēng)
NDS8858HTR

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