NDS8410 Datasheet

IC型號(hào)：
NDS8410
PDF描述：
Single N-Channel Enhancement Mode Field Effect Transistor
文件大?。?/label>
266.91KB
PDF頁數(shù)：
10頁
芯片廠家：
FAIRCHILD

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February 1996

NDS8410

Single N-Channel Enhancement Mode Field Effect Transistor

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance and provide

superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer

power management and other battery powered circuits where

fast switching, low in-line power loss, and resistance to

transients are needed.

Features

10A, 30V. R

DS(ON)

= 0.015

鈩?/div>

@ V

= 10V

DS(ON)

= 0.020

鈩?/div>

@ V

= 4.5V.

High density cell design for extremely low R

DS(ON)

High power and current handling capability in a widely used

surface mount package.

____________________________________________________________________________________________

Absolute Maximum Ratings

Symbol

DSS

GSS

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

= 25擄C unless otherwise noted

NDS8410

(Note 1a)

Units

鹵 10

鹵 50

Maximum Power Dissipation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

1.2

-55 to 150

STG

Operating and Storage Temperature Range

擄C

THERMAL CHARACTERISTICS

胃

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

擄C/W

漏 1997 Fairchild Semiconductor Corporation

NDS8410 Rev B2

標(biāo)準(zhǔn)包裝
2,500
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
10A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
15 毫歐 @ 10A，10V
Id 時(shí)的 Vgs(th)（最大）
1.5V @ 250µA
閘電荷(Qg) @ Vgs
60nC @ 10V
輸入電容 (Ciss) @ Vds
1350pF @ 15V
功率 - 最大
1W
安裝類型
表面貼裝
封裝/外殼
8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝
8-SOICN
包裝
帶卷 (TR)
其它名稱
NDS8410TR

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