NDS8410A
October 2004
NDS8410A
Single 30V N-Channel PowerTrench
廬
MOSFET
General Description
This N-Channel MOSFET are produced using
Fairchild鈥檚 proprietary, high cell density, DMOS
technology.
This very high density process is
especially tailored to minimize on-state resistance and
provide superior switching performance. These devices
are particularly suited for low voltage applications such
as notebook computer power management and other
battery powered circuits where fast switching, low in-
line power loss, and resistance to transients are
needed.
Features
鈥?/div>
10.8 A, 30 V
R
DS(ON)
= 12 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 17 m鈩?@ V
GS
= 4.5 V
鈥?/div>
Ultra-low gate charge
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
High power and current handling capability
D
D
D
D
SO-8
D
D
D
D
5
6
7
4
3
2
1
Pin 1
SO-8
G
S
G
S
S
S
S
S
T
A
=25 C unless otherwise noted
o
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Parameter
Ratings
30
鹵20
(Note 1a)
Units
V
A
W
10.8
50
2.5
1.2
1.0
鈥?5 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
50
25
擄C/W
Package Marking and Ordering Information
Device Marking
NDS8410A
Device
NDS8410A
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
漏2004
Fairchild Semiconductor Corporation
NDS8410A Rev D1(W)
NDS8410A_04相關(guān)型號PDF文件下載
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描述
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