NDS352AP Datasheet

IC型號：
NDS352AP
PDF描述：
P-Channel Logic Level Enhancement Mode Field Effect Transist...
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81.45KB
PDF頁數(shù)：
6頁
芯片廠家：
FAIRCHILD

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February 1997

NDS352AP

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

These P -Channel logic level enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applications

such as notebook computer power management, portable

electronics, and other battery powered circuits where fast

high-side switching, and low in-line power loss are needed in a

very small outline surface mount package.

Features

-0.9 A, -30 V. R

DS(ON)

= 0.5

鈩?/div>

@ V

= -4.5 V

DS(ON)

= 0.3

鈩?/div>

@ V

= -10 V.

Industry standard outline SOT-23 surface mount package

using proprietary SuperSOT

-3 design for superior thermal

and electrical capabilities.

High density cell design for extremely low R

DS(ON)

Exceptional on-resistance and maximum DC current

capability.

________________________________________________________________________________

Absolute Maximum Ratings

Symbol

DSS

GSS

Parameter

Drain-Source Voltage

= 25擄C unless otherwise noted

NDS352AP

-30

鹵20

(Note 1a)

Units

Gate-Source Voltage - Continuous

Maximum Drain Current - Continuous

- Pulsed

鹵0.9

鹵10

STG

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.5

0.46

-55 to 150

Operating and Storage Temperature Range

擄C

THERMAL CHARACTERISTICS

胃

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

250

擄C/W

漏 1997 Fairchild Semiconductor Corporation

NDS352AP Rev.D

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power ProcessingSMPS Power Switch
標(biāo)準(zhǔn)包裝
3,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET P 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
900mA
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
300 毫歐 @ 1A，10V
Id 時(shí)的 Vgs(th)（最大）
2.5V @ 250µA
閘電荷(Qg) @ Vgs
3nC @ 4.5V
輸入電容 (Ciss) @ Vds
135pF @ 15V
功率 - 最大
460mW
安裝類型
表面貼裝
封裝/外殼
TO-236-3，SC-59，SOT-23-3
供應(yīng)商設(shè)備封裝
3-SSOT
包裝
帶卷 (TR)
其它名稱
NDS352APTR

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