NDS336P Datasheet

IC型號：
NDS336P
PDF描述：
P-Channel Logic Level Enhancement Mode Field Effect Transist...
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PDF頁數(shù)：
6頁
芯片廠家：
FAIRCHILD

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June 1997

NDS336P

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

SuperSOT

-3 P-Channel logic level enhancement mode power

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This very high

density process is especially tailored to minimize on-state

resistance. These devices are particularly suited for low voltage

applications such as notebook computer power management,

portable electronics, and other battery powered circuits where

fast high-side switching, and low in-line power loss are needed

in a very small outline surface mount package.

Features

-1.2 A, -20 V, R

DS(ON)

= 0.27

鈩?/div>

@ V

= -2.7 V

DS(ON)

= 0.2

鈩?/div>

@ V

= -4.5 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits. V

GS(th)

< 1.0V.

Proprietary package design using copper lead frame for

superior thermal and electrical capabilities.

High density cell design for extremely low R

DS(ON)

Exceptional on-resistance and maximum DC current

capability.

Compact industry standard SOT-23 surface

package.

Mount

________________________________________________________________________________

Absolute Maximum Ratings

Symbol

DSS

GSS

STG

Parameter

Drain-Source Voltage

= 25擄C unless otherwise noted

NDS336P

-20

鹵8

(Note 1a)

Units

Gate-Source Voltage - Continuous

Maximum Drain Current - Continuous

- Pulsed

Maximum Power Dissipation

(Note 1a)

(Note 1b)

-1.2

-10

0.5

0.46

-55 to 150

Operating and Storage Temperature Range

擄C

THERMAL CHARACTERISTICS

胃JA

胃JC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

250

擄C/W

漏 1997 Fairchild Semiconductor Corporation

NDS336P Rev. E

標準包裝
3,000
類別
分離式半導體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET P 通道，金屬氧化物
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
20V
電流 - 連續(xù)漏極(Id) @ 25° C
1.2A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
200 毫歐 @ 1.3A，4.5V
Id 時的 Vgs(th)（最大）
1V @ 250µA
閘電荷(Qg) @ Vgs
8.5nC @ 4.5V
輸入電容 (Ciss) @ Vds
360pF @ 10V
功率 - 最大
460mW
安裝類型
表面貼裝
封裝/外殼
TO-236-3，SC-59，SOT-23-3
供應商設(shè)備封裝
3-SSOT
包裝
帶卷 (TR)
其它名稱
NDS336PTR

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