NDS0610 Datasheet

IC型號：
NDS0610
PDF描述：
P-Channel Enhancement Mode Field Effect Transistor
文件大小：
553.43KB
PDF頁數(shù)：
13頁
芯片廠家：
FAIRCHILD

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April 1995

NDF0610 / NDS0610

P-Channel Enhancement Mode Field Effect Transistor

General Description

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. This very high density

process has been designed to minimize on-state resistance,

provide rugged and reliable performance and fast switching.

They can be used, with a minimum of effort, in most

applications requiring up to 180mA DC and can deliver

pulsed currents up to 1A. This product is particularly suited

to low voltage applications requiring a low current high side

switch.

Features

-0.18 and -0.12A, -60V. R

DS(ON)

= 10

鈩?/div>

Voltage controlled p-channel small signal switch

High density cell design for low R

DS(ON)

TO-92 and SOT-23 packages for both through hole and

surface mount applications

High saturation current

____________________________________________________________________________________________

SOT-23

NDS0610

TO-92

NDF0610

Absolute Maximum Ratings

Symbol

Parameter

= 25擄C unless otherwise noted

NDF0610

NDS0610

Units

DSS

DGR

GSS

Drain-Source Voltage

Drain-Gate Voltage (R

< 1 M

鈩?/div>

)

Gate-Source Voltage - Continuous

- Nonrepetitive (t

< 50 碌s)

Drain Current - Continuous

- Pulsed

Maximum Power Dissipation T

= 25

擄

Derate above 25

擄

0.8

-0.18

-60

鹵20

鹵30

-0.12

-1

0.36

2.9

-55 to 150

300

mW/

擄C

STG

Operating and Storage Temperature Range

Maximum lead temperature for soldering

purposes, 1/16" from case for 10 seconds

THERMAL CHARACTERISTICS

胃

Thermal Resistance, Junction-to-Ambient

200

350

擄C/W

漏 1998 Fairchild Semiconductor Corporation

NDS0610.SAM

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power ProcessingSMPS Power Switch
標(biāo)準(zhǔn)包裝
3,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET P 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
60V
電流 - 連續(xù)漏極(Id) @ 25° C
120mA
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
10 歐姆 @ 500mA，10V
Id 時的 Vgs(th)（最大）
3.5V @ 1mA
閘電荷(Qg) @ Vgs
2.5nC @ 10V
輸入電容 (Ciss) @ Vds
79pF @ 25V
功率 - 最大
360mW
安裝類型
表面貼裝
封裝/外殼
TO-236-3，SC-59，SOT-23-3
供應(yīng)商設(shè)備封裝
SOT-23
包裝
帶卷 (TR)
其它名稱
NDS0610TR

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