鈩?/div>
@ V
GS
=4.5 V
.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low R
DS(ON)
.
175擄C maximum junction temperature rating.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Parameter
Drain-Source Voltage
T
C
= 25擄C unless otherwise noted
NDP6030L
30
鹵 16
52
156
75
0.5
-65 to 175
275
NDB6030L
Units
V
V
A
Gate-Source Voltage - Continuous
Drain Current
- Continuous
- Pulsed
P
D
Total Power Dissipation @ T
C
= 25擄C
Derate above 25擄C
W
W/擄C
擄C
擄C
T
J
,T
STG
T
L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
THERMAL CHARACTERISTICS
R
胃
JC
R
胃
JA
2
62.5
擄C/W
擄C/W
漏 1998 Fairchild Semiconductor Corporation
NDP6030L Rev.E