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NDH8521C Datasheet

  • NDH8521C

  • Dual N & P-Channel Enhancement Mode Field Effect Transistor

  • 104.80KB

  • 8頁

  • FAIRCHILD

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May 1997
NDH8521C
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
Features
N-Ch 3.8 A, 30 V, R
DS(ON)
=0.033
鈩?/div>
@ V
GS
=10 V
R
DS(ON)
=0.05
鈩?/div>
@ V
GS
=4.5 V
P-Ch -2.7 A, -30 V,R
DS(ON)
=0.07
鈩?/div>
@ V
GS
=-10 V
R
DS(ON)
=0.115
鈩?/div>
@ V
GS
=-4.5 V.
Proprietary SuperSOT
TM
-8 package design using copper lead
frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
________________________________________________________________________________
5
6
7
8
4
3
2
1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
P
D
T
J
,T
STG
T
A
= 25擄C unless otherwise noted
N-Channel
30
鹵20
(Note 1)
P-Channel
-30
鹵20
-2.7
-8
0.8
-55 to 150
Units
V
V
A
3.8
10.5
Power Dissipation for Single Operation
(Note 1)
W
擄C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)
156
40
擄C/W
擄C/W
漏 1997 Fairchild Semiconductor Corporation
NDH8521C Rev.C

NDH8521C 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N and P-Channel

  • 30 V

  • +/- 20 V

  • 3.8 A, - 2.7 A

  • Dual Dual Drain

  • + 150 C

  • SMD/SMT

  • SuperSOT-8

  • Reel

  • 15 nS, 16 nS

  • - 55 C

  • 800 mW

  • 15 nS, 16 nS

  • 3000

  • 20 nS, 35 nS

NDH8521C相關型號PDF文件下載

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  • 英文版
    Dual P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    Dual P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    Dual N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    Dual N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...

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