鈩?/div>
@ V
GS
= -2.7V
.
Proprietary SuperSOT
TM
-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
____________________________________________________________________________________________
5
6
7
8
4
3
2
1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
P
D
T
A
= 25擄C unless otherwise noted
NDH834P
-20
鹵8
(Note 1a)
Units
V
V
A
-5.6
-15
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
1.8
1
0.9
-55 to 150
W
T
J
,T
STG
Operating and Storage Temperature Range
擄C
THERMAL CHARACTERISTICS
R
qJA
R
qJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
70
20
擄C/W
擄C/W
漏 1997 Fairchild Semiconductor Corporation
NDH834P Rev.C