NDH832P Datasheet

IC型號：
NDH832P
PDF描述：
P-Channel Enhancement Mode Field Effect Transistor
文件大?。?/label>
84.95KB
PDF頁數(shù)：
8頁
芯片廠家：
FAIRCHILD

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June 1996

NDH832P

P-Channel Enhancement Mode Field Effect Transistor

General Description

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance and provide

superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer

power management and other battery powered circuits where

fast switching, low in-line power loss, and resistance to

transients are needed.

Features

-4.2A, -20V. R

DS(ON)

= 0.06

鈩?/div>

@ V

= -4.5V

DS(ON)

= 0.08

鈩?/div>

@ V

= -2.7V

High density cell design for extremely low R

DS(ON).

Enhanced SuperSOT

-8 small outline surface mount

package with high power and current handling capability.

___________________________________________________________________________________________

Absolute Maximum Ratings

Symbol

DSS

GSS

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

= 25擄C unless otherwise noted

NDH832P

-20

-8

(Note 1a)

Units

-4.2

-15

Maximum Power Dissipation

(Note 1a)

(Note 1b)

(Note 1c)

1.8

0.9

-55 to 150

STG

Operating and Storage Temperature Range

擄C

THERMAL CHARACTERISTICS

胃

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

擄C/W

NDH832P Rev. B2

標(biāo)準(zhǔn)包裝
3,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET P 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
20V
電流 - 連續(xù)漏極(Id) @ 25° C
4.2A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
60 毫歐 @ 4.2A，4.5V
Id 時(shí)的 Vgs(th)（最大）
1V @ 250µA
閘電荷(Qg) @ Vgs
30nC @ 4.5V
輸入電容 (Ciss) @ Vds
1000pF @ 10V
功率 - 最大
900mW
安裝類型
表面貼裝
封裝/外殼
8-SSOT，SuperSOT-8
供應(yīng)商設(shè)備封裝
8-SSOT
包裝
帶卷 (TR)

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