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NDH8321C Datasheet

  • NDH8321C

  • Dual N & P-Channel Enhancement Mode Field Effect Transistor

  • 12頁(yè)

  • FAIRCHILD

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January 1999
NDH8321C
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P -Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and other battery powered circuits where fast
switching, low in-line power loss, and resistance
to
transients are needed.
Features
N-Ch 3.8 A, 20 V, R
DS(ON)
=0.035
鈩?/div>
@ V
GS
= 4.5 V
R
DS(ON)
=0.045
鈩?/div>
@ V
GS
=2.7 V
P-Ch -2.7 A, -20V, R
DS(ON)
=0.07
鈩?/div>
@ V
GS
= -4.5 V
R
DS(ON)
=0.095
鈩?/div>
@ V
GS
= -2.7 V.
Proprietary SuperSOT
TM
-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
_______________________________________________________________________________
D2
D2
D1
D1
S2
S1
G1
G2
5
6
7
8
4
3
2
1
SuperSOT
TM
-8
Mark: .8321C
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25擄C unless otherwise noted
N-Channel
P-Channel
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1)
20
鹵8
3.8
15
(Note 1)
-20
鹵8
-2.7
-10
0.8
-55 to 150
V
V
A
P
D
T
J
,T
STG
Power Dissipation for Single Operation
W
擄C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)
156
40
擄C/W
擄C/W
漏 1999 Fairchild Semiconductor Corporation
NDH8321C Rev.C1

NDH8321C 產(chǎn)品屬性

  • Fairchild Semiconductor

  • MOSFET

  • N and P-Channel

  • +/- 20 V

  • +/- 8 V

  • + 3.8 A, - 2.7 A

  • 0.029 Ohms

  • Dual Dual Drain

  • + 150 C

  • SMD/SMT

  • SSOT-8

  • Reel

  • 22 ns at N Channel, 25 ns at P Channel

  • - 55 C

  • 0.8 W

  • 22 ns at N Channel, 25 ns at P Channel

  • 3000

  • 48 ns at N Channel, 78 ns at P Channel

NDH8321C相關(guān)型號(hào)PDF文件下載

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    版本
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  • 英文版
    Dual P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    Dual P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    P-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    Dual N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    Dual N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...

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