鈩?/div>
@ V
GS
=-2.7 V.
Proprietary SuperSOT
TM
-8 package design using copper lead
frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
_____________________________________________________________________
______________
5
4
3
2
1
6
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
P
D
T
J
,T
STG
T
A
= 25擄C unless otherwise noted
N-Channel
20
8
(Note 1)
P-Channel
-20
-8
-2
-10
0.8
-55 to 150
Units
V
V
A
3
15
Power Dissipation for Single Operation
Operating and Storage Temperature Range
(Note 1)
W
擄C
THERMAL CHARACTERISTICS
R
胃
JA
R
胃
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)
156
40
擄C/W
擄C/W
漏 1997 Fairchild Semiconductor Corporation
NDH8320C Rev.B