July 1996
NDH831N
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and portable electronics where fast
switching, low in-line power loss, and resistance to transients
are needed.
Features
5.8A, 20V. R
DS(ON)
= 0.03鈩?@ V
GS
= 4.5V
R
DS(ON)
= 0.04鈩?@ V
GS
= 2.7V.
High density cell design for extremely low R
DS(ON)
.
Enhanced SuperSOT
TM
-8 small outline surface mount
package with high power and current handling capability.
____________________________________________________________________________________________
5
6
7
8
4
3
2
1
Absolute Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
NDH831N
20
8
5.8
20
1.8
1
0.9
-55 to 150
Units
V
V
A
W
T
J
,T
STG
Operating and Storage Temperature Range
擄C
THERMAL CHARACTERISTICS
R
胃
JA
R
胃
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
70
20
擄C/W
擄C/W
漏 1997 Fairchild Semiconductor Corporation
NDH831N Rev. D