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NDC632P Datasheet

  • NDC632P

  • P-Channel Logic Level Enhancement Mode Field Effect Transist...

  • 10頁(yè)

  • FAIRCHILD

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June1996
NDC632P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These P-Channel logic level enhancement mode
power field effect transistors are produced using
Fairchild's proprietary, high cell density, DMOS
technology. This very high density process is
especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits
where fast high-side switching, and low in-line power
loss are needed in a very small outline surface
mount package.
Features
-2.7A, -20V. R
DS(ON)
= 0.14
鈩?/div>
@ V
GS
= -4.5V
R
DS(ON)
= 0.2
鈩?/div>
@ V
GS
= -2.7V.
Proprietary SuperSOT
TM
-6 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
___________________________________________________________________________________________
4
3
5
2
6
1
SuperSOT
TM
-6
Absolute Maximum Ratings
Symbol Parameter
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
T
A
= 25擄C unless otherwise noted
NDC632P
-20
-8
-2.7
-10
(Note 1a)
(Note 1b)
(Note 1c)
Units
V
V
A
1.6
1
0.8
-55 to 150
W
T
J
,T
STG
Operating and Storage Temperature Range
擄C
THERMAL CHARACTERISTICS
R
胃
JA
R
胃
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
擄C/W
擄C/W
漏 1997 Fairchild Semiconductor Corporation
NDC632P Rev. B1

NDC632P 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET P 通道，金屬氧化物

  • 邏輯電平門(mén)

  • 20V

  • 2.7A

  • 140 毫歐 @ 2.7A，4.5V

  • 1V @ 250µA

  • 15nC @ 4.5V

  • 550pF @ 10V

  • 800mW

  • 表面貼裝

  • SOT-23-6 細(xì)型，TSOT-23-6

  • 6-SSOT

  • 帶卷 (TR)

  • NDC632P-ND

NDC632P相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
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    廠商
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  • 英文版
    P-Channel Logic Level Enhancement Mode Field Effect Transist...
    FAIRCHILD
  • 英文版
    P-Channel Logic Level Enhancement Mode Field Effect Transist...
    FAIRCHILD ...
  • 英文版
    P-Channel Logic Level Enhancement Mode Field Effect Transist...
    FAIRCHILD
  • 英文版
    P-Channel Logic Level Enhancement Mode Field Effect Transist...
    FAIRCHILD ...
  • 英文版
    N-Channel Logic Level Enhancement Mode Field Effect Transist...
    FAIRCHILD
  • 英文版
    N-Channel Logic Level Enhancement Mode Field Effect Transist...
    FAIRCHILD ...
  • 英文版
    P-Channel Logic Level Enhancement Mode Field Effect Transist...
    FAIRCHILD
  • 英文版
    P-Channel Logic Level Enhancement Mode Field Effect Transist...
    FAIRCHILD ...
  • 英文版
    N-Channel Logic Level Enhancement Mode Field Effect Transist...
    FAIRCHILD
  • 英文版
    N-Channel Logic Level Enhancement Mode Field Effect Transist...
    FAIRCHILD ...
  • 英文版
    P-Channel Logic Level Enhancement Mode Field Effect Transist...
    FAIRCHILD
  • 英文版
    P-Channel Logic Level Enhancement Mode Field Effect Transist...
    FAIRCHILD ...
  • 英文版
    Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 1-Elem...
    FAIRCHILD
  • 英文版
    Small Signal Field-Effect Transistor, 2.4A I(D), 30V, 1-Elem...
    FAIRCHILD

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