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NDB6060 Datasheet

  • NDB6060

  • N-Channel Enhancement Mode Field Effect Transistor

  • 12頁

  • FAIRCHILD

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March 1996
NDP6060 / NDB6060
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited
for low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line power
loss, and resistance to transients are needed.
Features
48A, 60V. R
DS(ON)
= 0.025
鈩?/div>
@ V
GS
=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175擄C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
DGR
V
GSS
I
D
Parameter
Drain-Source Voltage
T
C
= 25擄C unless otherwise noted
NDP6060
60
60
鹵 20
鹵 40
o
NDB6060
Units
V
V
V
Drain-Gate Voltage (R
GS
< 1 M
鈩?/div>
)
Gate-Source Voltage - Continuous
- Nonrepetitive (t
P
< 50 碌s)
Drain Current
- Continuous
T
c
=25 C
T
C
=100
o
C
48
32
144
100
0.67
-65 to 175
275
A
- Continuous
- Pulsed
P
D
Total Power Dissipation @ T
C
= 25擄C
Derate above 25擄C
W
W/擄C
擄C
擄C
T
J
,T
STG
T
L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
漏 1997 Fairchild Semiconductor Corporation
NDP6060 Rev. B1 / NDB6060 Rev. C

NDB6060 產(chǎn)品屬性

  • 800

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 60V

  • 48A

  • 25 毫歐 @ 24A，10V

  • 4V @ 250µA

  • 70nC @ 10V

  • 1800pF @ 25V

  • 100W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • TO-263AB

  • 帶卷 (TR)

  • NDB6060TR

NDB6060相關(guān)型號PDF文件下載

  • 型號
    版本
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    廠商
    下載
  • 英文版
    N-Channel Logic Level Enhancement Mode Field Effect Transist...
    FAIRCHILD
  • 英文版
    N-Channel Logic Level Enhancement Mode Field Effect Transist...
    FAIRCHILD ...
  • 英文版
    N-Channel Logic Level Enhancement Mode Field Effect Transist...
    FAIRCHILD
  • 英文版
    N-Channel Logic Level Enhancement Mode Field Effect Transist...
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD
  • 英文版
    N-Channel Enhancement Mode Field Effect Transistor
    FAIRCHILD ...

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