NDB6060L Datasheet

IC型號：
NDB6060L
PDF描述：
N-Channel Logic Level Enhancement Mode Field Effect Transist...
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PDF頁數(shù)：
12頁
芯片廠家：
FAIRCHILD

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April 1996

NDP6060L / NDB6060L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

These logic level N-Channel enhancement mode power

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulses in the

avalanche and commutation modes. These devices are

particularly suited for low voltage applications such as

automotive, DC/DC converters, PWM motor controls,

and other battery powered circuits where fast switching,

low in-line power loss, and resistance to transients are

needed.

Features

48A, 60V. R

DS(ON)

= 0.025

鈩?/div>

@ V

= 5V.

Low drive requirements allowing operation directly from logic

drivers. V

GS(TH)

< 2.0V.

Critical DC electrical parameters specified at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.

175擄C maximum junction temperature rating.

High density cell design for extremely low R

DS(ON)

TO-220 and TO-263 (D

PAK) package for both through hole

and surface mount applications.

________________________________________________________________________________

Absolute Maximum Ratings

Symbol

DSS

DGR

GSS

Parameter

Drain-Source Voltage

= 25擄C unless otherwise noted

NDP6060L

鹵 16

鹵 25

144

100

0.67

-65 to 175

275

NDB6060L

Units

Drain-Gate Voltage (R

< 1 M

鈩?/div>

)

Gate-Source Voltage - Continuous

- Nonrepetitive (t

< 50 碌s)

Drain Current

- Continuous

- Pulsed

Total Power Dissipation @ T

= 25擄C

Derate above 25擄C

W/擄C

擄C

STG

Operating and Storage Temperature

Maximum lead temperature for soldering

purposes, 1/8" from case for 5 seconds

漏 1997 Fairchild Semiconductor Corporation

NDP6060L Rev. D / NDB6060L Rev. E

產品培訓模塊
High Voltage Switches for Power ProcessingSMPS Power Switch
標準包裝
800
類別
分離式半導體產品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
60V
電流 - 連續(xù)漏極(Id) @ 25° C
48A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
20 毫歐 @ 24A，10V
Id 時的 Vgs(th)（最大）
2V @ 250µA
閘電荷(Qg) @ Vgs
60nC @ 5V
輸入電容 (Ciss) @ Vds
2000pF @ 25V
功率 - 最大
100W
安裝類型
表面貼裝
封裝/外殼
TO-263-3，D²Pak（2 引線+接片），TO-263AB
供應商設備封裝
TO-263AB
包裝
帶卷 (TR)
其它名稱
NDB6060LTR

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