NDB6030 Datasheet

IC型號(hào)：
NDB6030
PDF描述：
N-Channel Enhancement Mode Field Effect Transistor
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59.21KB
PDF頁(yè)數(shù)：
4頁(yè)
芯片廠家：
FAIRCHILD

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July 1997

NDP6030 / NDB6030

N-Channel Enhancement Mode Field Effect Transistor

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process has

been especially tailored to minimize on-state resistance and

provide superior switching performance. These devices are

particularly suited for low voltage applications such as DC/DC

converters and other battery powered circuits where fast

switching, low in-line power loss, and resistance to transients

are needed.

Features

46 A, 30 V. R

DS(ON)

= 0.018 @ V

=10 V.

Critical DC electrical parameters specified at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.

175擄C maximum junction temperature rating.

High density cell design for extremely low R

DS(ON)

TO-220 and TO-263 (D

PAK) package for both through hole

and surface mount applications

________________________________________________________________________________

Absolute Maximum Ratings

Symbol

DSS

DGR

GSS

Parameter

Drain-Source Voltage

= 25擄C unless otherwise noted

NDP6030

鹵20

135

0.5

-65 to 175

NDB6030

Units

Drain-Gate Voltage (R

< 1 M

鈩?/div>

)

Gate-Source Voltage - Continuous

Drain Current

- Continuous

- Pulsed

Total Power Dissipation @ T

= 25擄C

Derate above 25擄C

W/擄C

擄C

STG

胃JC

胃

Operating and Storage Temperature Range

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

62.5

擄C/W

漏 1997 Fairchild Semiconductor Corporation

NDP6030.RevB

制造商
Fairchild Semiconductor
晶體管極性
N-Channel
汲極/源極擊穿電壓
30 V
閘/源擊穿電壓
+/- 20 V
漏極連續(xù)電流
46 A
電阻汲極/源極 RDS（導(dǎo)通）
0.018 Ohms
配置
Single
最大工作溫度
+ 175 C
安裝風(fēng)格
SMD/SMT
封裝 / 箱體
TO-263AB
下降時(shí)間
98 ns
最小工作溫度
- 65 C
功率耗散
75 W
上升時(shí)間
103 ns
典型關(guān)閉延遲時(shí)間
40 ns

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