NDB6030PL Datasheet

IC型號：
NDB6030PL
PDF描述：
P-Channel Logic Level Enhancement Mode Field Effect Transist...
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4頁
芯片廠家：
FAIRCHILD

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June 1997

NDP6030PL / NDB6030PL

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

These P-Channel logic level enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage

applications such as DC/DC converters and high efficiency

switching circuits where fast switching, low in-line power loss,

and resistance to transients are needed.

Features

-30 A, -30 V. R

DS(ON)

= 0.042

鈩?/div>

@ V

= -4.5 V

DS(ON)

= 0.025

鈩?/div>

@ V

= -10 V

Critical DC electrical parameters specified at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.

High density cell design for extremely low R

DS(ON)

175擄C maximum junction temperature rating.

________________________________________________________________________________

Absolute Maximum Ratings

Symbol

DSS

GSS

Parameter

Drain-Source Voltage

= 25擄C unless otherwise noted

NDP6030PL

-30

鹵16

-30

-90

0.5

-65 to 175

275

-65 to 175

NDB6030PL

Units

Gate-Source Voltage - Continuous

Drain Current

- Continuous

- Pulsed

Total Power Dissipation @ T

= 25擄C

Derate above 25擄C

STG

胃

胃JA

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

Operating and Storage Temperature Range

擄C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

62.5

擄C/W

NDP6030PL Rev.B1

漏 1997 Fairchild Semiconductor Corporation

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power Processing
標準包裝
800
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET P 通道，金屬氧化物
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
30A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
25 毫歐 @ 19A，10V
Id 時的 Vgs(th)（最大）
2V @ 250µA
閘電荷(Qg) @ Vgs
36nC @ 5V
輸入電容 (Ciss) @ Vds
1570pF @ 15V
功率 - 最大
75W
安裝類型
表面貼裝
封裝/外殼
TO-263-3，D²Pak（2 引線+接片），TO-263AB
供應(yīng)商設(shè)備封裝
TO-263（D2Pak）
包裝
帶卷 (TR)
其它名稱
NDB6030PL-NDNDB6030PLFSTR

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NDB6030PL Datasheet

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