NDB6020 Datasheet

IC型號(hào)：
NDB6020
PDF描述：
N-Channel Logic Level Enhancement Mode Field Effect Transist...
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November 1996

NDP6020 / NDB6020

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

These logic level N-Channel enhancement mode power

field effect transistors are produced using National's

proprietary, high cell density, DMOS technology. This

very high density process has been especially tailored

to minimize on-state resistance, provide superior

switching performance, and withstand high energy

pulses in the avalanche and commutation modes.

These devices are particularly suited for low voltage

applications such as automotive, DC/DC converters,

PWM motor controls, and other battery powered

circuits where fast switching, low in-line power loss,

and resistance to transients are needed.

Features

35 A, 20 V. R

DS(ON)

= 0.023

鈩?/div>

@ V

= 4.5 V

DS(ON)

= 0.028

鈩?/div>

@ V

= 2.7 V.

Critical DC electrical parameters specified at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.

175擄C maximum junction temperature rating.

High density cell design for extremely low R

DS(ON)

TO-220 and TO-263 (D

PAK) package for both through

hole and surface mount applications.

_______________________________________________________________________________

Absolute Maximum Ratings

Symbol

Parameter

= 25擄C unless otherwise noted

NDP6020

NDB6020

Units

DSS

DGR

GSS

Drain-Source Voltage

Drain-Gate Voltage (R

< 1 M

鈩?/div>

)

Gate-Source Voltage - Continuous

Drain Current

- Continuous

- Pulsed

鹵8

100

0.4

-65 to 175

Total Power Dissipation @ T

= 25

擄

Derate above 25

擄

擄C

STG

Operating and Storage Temperature Range

漏 1997 Fairchild Semiconductor Corporation

NDP6020 Rev.C

制造商
Fairchild Semiconductor
晶體管極性
N-Channel
汲極/源極擊穿電壓
20 V
閘/源擊穿電壓
+/- 8 V
漏極連續(xù)電流
35 A
電阻汲極/源極 RDS（導(dǎo)通）
0.023 Ohms
配置
Single
最大工作溫度
+ 175 C
安裝風(fēng)格
SMD/SMT
封裝 / 箱體
TO-263AB
封裝
Rail
下降時(shí)間
233 ns
最小工作溫度
- 65 C
功率耗散
60 W
上升時(shí)間
148 ns
典型關(guān)閉延遲時(shí)間
98 ns

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