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NDA-320-D

4

Typical Applications

鈥?Narrow and Broadband Commercial and

Military Radio Designs

鈥?Linear and Saturated Amplifiers

鈥?Gain Stage or Driver Amplifiers for

MWRadio/Optical Designs

GaInP/GaAs HBT MMIC DISTRIBUTED

AMPLIFIER DC TO 12GHz

4

Product Description

The NDA-320-D Casacadable Broadband GaInP/GaAs

MMIC amplifier is a low-cost, high-performance solution

for high frequency RF, microwave, or optical amplification

needs. This 50鈩?gain block is based on a reliable HBT

proprietary MMIC design, providing unsurpassed perfor-

mance for small-signal applications. Designed with an

external bias resistor, the NDA-320-D provides flexibility

and stability. In addition, the NDA-320-D chip was

designed with an additional ground via, providing

improved thermal resistance performance. The

NDA-series of distributed amplifiers provide design flexi-

bility by incorporating AGC functionality into their designs.

GENERAL PURPOSE

AMPLIFIERS

Optimum Technology Matching廬 Applied

Si BJT

GaAs HBT

SiGe HBT

GaN HEMT

GaAs MESFET

Si CMOS

Package Style: Die

!

GaInP/HBT

Si Bi-CMOS

Features

鈥?Reliable, Low-Cost HBT Design

鈥?10.0dB Gain at 6GHz

鈥?High P1dB of +13.5dBm @ 2GHz

鈥?Fixed Gain or AGC Operation

鈥?50鈩?I/O Matched for High Freq. Use

Ordering Information

NDA-320-D

GaInP/GaAs HBT MMIC Distributed Amplifier DC to

12GHz - Die Only

Functional Block Diagram

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Rev A0 020115

4-407

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