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NCP5351DR2 Datasheet

  • NCP5351DR2

  • 4 A Synchronous Buck Power MOSFET Driver

  • 188.26KB

  • 14頁

  • ONSEMI

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NCP5351
4 A Synchronous Buck
Power MOSFET Driver
The NCP5351 is a dual MOSFET gate driver optimized to drive the
gates of both high鈭抯ide and low鈭抯ide Power MOSFETs in a
Synchronous Buck converter. The NCP5351 is an excellent
companion to multiphase controllers that do not have integrated gate
drivers, such as ON Semiconductor鈥檚 CS5323, CS5305 or CS5307.
This architecture provides a power supply designer the flexibility to
locate the gate drivers close to the MOSFETs.
The 4.0 A drive capability makes the NCP5351 ideal for minimizing
switching losses in MOSFETs with large input capacitance. Optimized
internal, adaptive nonoverlap circuitry further reduces switching
losses by preventing simultaneous conduction of both MOSFETs.
The floating top driver design can accommodate MOSFET drain
voltages as high as 25 V. Both gate outputs can be driven low, and
supply current reduced to less than 25
mA,
by applying a low logic
level to the Enable (EN) pin. An undervoltage lockout function
ensures that both driver outputs are low when the supply voltage is
low, and a thermal shutdown function provides the IC with
overtemperature protection.
The NCP5351 is pin鈭抰o鈭抪in compatible with the SC1205 and is
available in a standard SO鈭? package and thermally enhanced
QFN鈭?0.
Features
http://onsemi.com
MARKING
DIAGRAMS
8
8
1
SO鈭?
D SUFFIX
CASE 751
1
QFN鈭?0
MN SUFFIX
CASE 485C
A
L
Y
W
10
5351
ALYW
1
5351
ALYW
1
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
4.0 A Peak Drive Current
Rise and Fall Times < 15 ns Typical into 6000 pF
Propagation Delay from Inputs to Outputs < 20 ns
Adaptive Nonoverlap Time Optimized for Large Power MOSFETs
Floating Top Driver Accommodates Applications Up to 25 V
Undervoltage Lockout to Prevent Switching when the Input
Voltage is Low
Thermal Shutdown Protection Against Overtemperature
< 1.0 mA Quiescent Current 鈭?Enabled
25
mA
Quiescent Current 鈭?Disabled
Internal TG to DRN Pulldown Resistor Prevents HV Supply鈭捍nduced
Turn On of High鈭扴ide MOSFET
= Assembly Location
= Wafer Lot
= Year
= Work Week
PIN CONNECTIONS
DRN
TG
BST
CO
QFN鈭?0
1
DRN
TG
N/C
BST
CO
10
GND
BG
N/C
V
S
EN
1
SO鈭?
8
PGND
BG
V
S
EN
ORDERING INFORMATION
Device
NCP5351D
NCP5351DR2
NCP5351MNR2
Package
SO鈭?
SO鈭?
QFN鈭?0
Shipping
鈥?/div>
98 Units/Rail
2500 Tape & Reel
2500 Tape & Reel
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2004
1
June, 2004 鈭?Rev. 9
Publication Order Number:
NCP5351/D

NCP5351DR2 產品屬性

  • 2,500

  • 集成電路 (IC)

  • PMIC - MOSFET,電橋驅動器 - 外部開關

  • -

  • 高端和低端,同步

  • 反相和非反相

  • 45ns

  • 4A

  • 1

  • 2

  • 25V

  • 4.5 V ~ 6.3 V

  • -30°C ~ 85°C

  • 表面貼裝

  • 8-SOIC(0.154",3.90mm 寬)

  • 8-SOICN

  • 帶卷 (TR)

  • NCP5351DR2OSTR

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