30V, 75A, 3.2m鈩?/div>
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
鈥?Fast switching
鈥?r
DS(ON)
= 0.0026鈩?(Typ), V
GS
= 10V
鈥?r
DS(ON)
= 0.004鈩?(Typ), V
GS
= 4.5V
鈥?Q
g
(Typ) = 61nC, V
GS
= 5V
鈥?Q
gd
(Typ) = 17nC
鈥?C
ISS
(Typ) = 7000pF
Applications
鈥?DC/DC converters
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
SOURCE
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
G
DRAIN
(FLANGE)
D
TO-220AB
TO-263AB
TO-262AB
S
MOSFET Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
=
Continuous (T
C
=
Pulsed
P
D
T
J
, T
STG
Power dissipation
Derate above
Operating and Storage Temperature
100
o
C,
25
o
C,
V
GS
= 4.5V)
43
o
C/W)
V
GS
= 10V, R
胃JA
=
75
75
25
Figure 4
215
1.43
-55 to 175
W
W/
o
C
o
Parameter
Ratings
30
鹵20
Units
V
V
A
A
A
C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance Junction to Case TO-220, TO-262, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263
Thermal Resistance Junction to Ambient TO-263, 1in copper pad area
2
0.7
62
43
o
C/W
o
o
C/W
C/W
Package Marking and Ordering Information
Device Marking
N303AS
N303AP
N303AS
Device
ISL9N303AS3ST
ISL9N303AP3
ISL9N303AS3
Package
TO-263AB
TO-220AB
TO-262AA
Reel Size
330mm
Tube
Tube
Tape Width
24mm
N/A
N/A
Quantity
800 units
50 units
50 units
漏2002 Fairchild Semiconductor Corporation
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1