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N302AS Datasheet

  • N302AS

  • N-Channel Logic Level PWM Optimized UltraFET Trench Power MO...

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  • FAIRCHILD

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ISL9N302AS3ST
April 2002
ISL9N302AS3ST
N-Channel Logic Level PWM Optimized UltraFET廬 Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
鈥?Fast switching
鈥?r
DS(ON)
= 0.0019鈩?(Typ), V
GS
= 10V
鈥?r
DS(ON)
= 0.0027鈩?(Typ), V
GS
= 4.5V
鈥?Q
g
(Typ) = 110nC, V
GS
= 5V
鈥?Q
gd
(Typ) = 31nC
鈥?C
ISS
(Typ) = 11000pF
Applications
鈥?DC/DC converters
DRAIN
(FLANGE)
D
GATE
SOURCE
G
S
TO-263AB
MOSFET Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
=
Pulsed
P
D
T
J
, T
STG
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
100
o
C,
o
Parameter
Ratings
30
鹵20
75
75
o
Units
V
V
A
A
A
A
W
W/
o
C
o
V
GS
= 4.5V)
Continuous (T
C
= 25 C, V
GS
= 10V, R
胃JA
= 43 C/W)
28
Figure 4
345
2.3
-55 to 175
C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263
Thermal Resistance Junction to Ambient TO-263, 1in copper pad area
2
0.43
62
43
o
o
o
C/W
C/W
C/W
Package Marking and Ordering Information
Device Marking
N302AS
Device
ISL9N302AS3ST
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
漏2002 Fairchild Semiconductor Corporation
Rev. B1,April 2002

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