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N302AP Datasheet

  • N302AP

  • N-Channel Logic Level PWM Optimized UltraFET Trench Power MO...

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ISL9N302AP3
January 2002
ISL9N302AP3
N-Channel Logic Level PWM Optimized UltraFET廬 Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
鈥?Fast switching
鈥?r
DS(ON)
= 0.0019
鈩?/div>
(Typ), V
GS
= 10V
鈥?r
DS(ON)
= 0.0027
鈩?/div>
(Typ), V
GS
= 4.5V
鈥?Q
g
(Typ) = 110nC, V
GS
= 5V
鈥?Q
gd
(Typ) = 31nC
鈥?C
ISS
(Typ) = 11000pF
Applications
鈥?DC/DC converters
SOURCE
DRAIN
GATE
D
G
DRAIN
(FLANGE)
S
TO-220AB
MOSFET Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
Pulsed
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
Parameter
Ratings
30
鹵
20
75
75
Figure 4
345
2.3
-55 to 175
Units
V
V
A
A
A
W
W/
o
C
o
C
I
D
P
D
T
J
, T
STG
Thermal Characteristics
R
胃
JC
R
胃
JA
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220
0.43
62
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
N302AP
Device
ISL9N302AP3
Package
TO-220AB
Reel Size
Tube
Tape Width
N/A
Quantity
50
漏2002 Fairchild Semiconductor Corporation
Rev. B January 2002

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  • 英文版
    N-Channel Logic Level PWM Optimized UltraFET Trench Power MO...
    FAIRCHILD
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    N-Channel Logic Level PWM Optimized UltraFET Trench Power MO...
    FAIRCHILD ...
  • 英文版
    N-Channel Logic Level PWM Optimized UltraFET Trench Power MO...
    FAIRCHILD
  • 英文版
    N-Channel Logic Level PWM Optimized UltraFET Trench Power MO...
    FAIRCHILD ...

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