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N28F020-90 Datasheet

  • N28F020-90

  • 28F020 2048K (256K X 8) CMOS FLASH MEMORY

  • 877.58KB

  • 38頁(yè)

  • INTEL   INTEL

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E
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12.0 V 鹵5% V
PP
28F020 2048K (256K X 8) CMOS
FLASH MEMORY
n
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Command Register Architecture for
Microprocessor/Microcontroller
Compatible Write Interface
Noise Immunity Features
錚?/div>
鹵10% V
CC
Tolerance
錚?/div>
Maximum Latch-Up Immunity
through EPI Processing
ETOX鈩?Nonvolatile Flash Technology
錚?/div>
EPROM-Compatible Process Base
錚?/div>
High-Volume Manufacturing
Experience
JEDEC-Standard Pinouts
錚?/div>
32-Pin Plastic Dip
錚?/div>
32-Lead PLCC
錚?/div>
32-Lead TSOP
(See Packaging Spec., Order #231369)
Flash Electrical Chip-Erase
錚?/div>
2 Second Typical Chip-Erase
Quick-Pulse Programming Algorithm
錚?/div>
10 碌S Typical Byte-Program
錚?/div>
4 second Chip-Program
100,000 Erase/Program Cycles
High-Performance Read
錚?/div>
90 ns Maximum Access Time
CMOS Low Power Consumption
錚?/div>
10 mA Typical Active Current
錚?/div>
50 碌A(chǔ) Typical Standby Current
錚?/div>
0 Watts Data Retention Power
Integrated Program/Erase Stop Timer
n
Extended Temperature Options
Intel鈥檚 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write
random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar
EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-
board during subassembly test; in-system during final test; and in-system after sale. The 28F020 increases
memory flexibility, while contributing to time and cost savings.
The 28F020 is a 2048-kilobit nonvolatile memory organized as 262,144 bytes of eight bits. Intel鈥檚 28F020 is
offered in 32-pin plastic DIP, 32-lead PLCC, and 32-lead TSOP packages. Pin assignments conform to
JEDEC standards for byte-wide EPROMs.
Extended erase and program cycling capability is designed into Intel鈥檚 ETOX鈩?(EPROM Tunnel Oxide)
process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field
combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V V
PP
supply, the
28F020 performs 100,000 erase and program cycles鈥攚ell within the time limits of the quick-pulse
programming and quick-erase algorithms.
Intel鈥檚 28F020 employs advanced CMOS circuitry for systems requiring high-performance access speeds,
low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance
for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 碌A(chǔ) translates
into power savings when the device is deselected. Finally, the highest degree of latch-up protection is
achieved through Intel鈥檚 unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA
on address and data pins, from 鈥? V to V
CC
+ 1 V.
With Intel鈥檚 ETOX process technology base, the 28F020 builds on years of EPROM experience to yield the
highest levels of quality, reliability, and cost-effectiveness.
December 1997
Order Number: 290245-009

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