Obsolete Product 鈥?not recommended for new design
MXP4005 鈥?12.7 Gbps
InGaAs/InP PIN Photo Diode
O
PTO
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LECTRONIC
P
RODUCTS
P
RODUCTION
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ATA
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HEET
DESCRIPTION
KEY FEATURES
WWW .
Microsemi
.C
OM
Microsemi鈥檚 InGaAs/InP PIN Photo
Diode chips are ideal for high bandwidth
1310nm and 1550nm optical networking
applications.
The device series offers superior noise
performance and sensitivity due to their
planar construction and passivation.
The MXP400X series of photo
diodes are currently offered in die
form allowing manufacturers the
versatility of custom assembly
configurations.
This device is ideal for manu-
facturers of optical receivers,
transponders, optical transmission
modules and combination PIN photo
diode 鈥?transimpedance amplifier.
Microsemi will assemble die on
submounts and custom confi-
gurations.
High Responsivity
Low Dark Current
Extremely Low Capacitance
12GHz , High Bandwidth
Custom Sub-mounts
Large 40um Bond Pad
APPLICATIONS
1310nm CATV Optical Applications
1550nm DWDM Optical Applications
SONET/SDH (FEC), ATM
10Gigabit Ethernet, Fibre Channel
10Gbps NRZ or RZ modulation
Optical Test equipment
BENEFITS
IMPORTANT:
For the most current data, consult
MICROSEMI鈥檚
website:
http://www.microsemi.com
Planar passivation
Low Contact Resistance
PRODUCT HIGHLIGHT
Typical Spectral Responsivity
Responsivity (Amps / Watt)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
800
508um
鹵 25um
脴 40um
鹵
Bond
MXP4
45
508um
鹵 25um
900 1000 1100 1200 1300 1400 1500 1600 1700
Wavelength (nm)
MICROS
Active Area
20um
Anod
MXP4005
MXP4005
150
鹵 20um
508um
鹵 25um
Copyright
漏
2001
Rev. 1.1
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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