PRELIMINARY
MXP4000 Series
O
PTO
E
LECTRONIC
P
RODUCTS
InGaAs/InP PIN Photodiode Chips
P
RODUCT
P
REVIEW
DESCRIPTION
KEY FEATURES
W W W .
Microsemi
.COM
Microsemi鈥檚 InGaAs/InP PIN
Photodiode chips are ideal for wide
bandwidth 1310nm and 1550nm
optical networking applications.
The four devices offered feature
excellent dark current ratings of 1-3
nA, and a breakdown voltage of 20
Volts with the bandwidth options for
156 Mb/sec (active area of 300um
2
),
622 Mb/sec (active area of 200 um
2
),
2.5
Gb/sec
(active area of 75 um
2
),
10 Gb/sec (active area of 40 um
2
),
The MXP4000 series of
photodiodes are originally offered in
die form for manufacturers of optical
transponders, supervisory VCSEL
monitoring circuits, and combination
PIN Photodiode-transimpedance
amplifier hybrids.
!"
Low Dark Current
!"
Extremely low capacitance
!"
Wide bandwidth
!"
Fast response time
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFITS
!"
1310nm Fiber Optic
Applications
!"
1550nm Fiber Optic
Applications
!"
Optical Transponders
IMPORTANT:
For the most current data, consult
MICROSEMI鈥檚
website:
http://www.microsemi.com
Item
Active Area(Dia.)
Photo Sensitive
Area
Detection Range
Responsivity
Responsivity
Dark Current
Capacitance
Rise/Fall Time
Bandwidth
Breakdown
Voltage
Chip Size
Bonding Pad
Size
Sym
PART RATINGS AND CHARACTERISTICS
MXP4000
MXP4001
MXP4002
MXP4003
300
200
75
40
Unit
碌m
Test Condition
鈥?/div>
Res
Res
I
D
C
t
r
/t
f
VB
0.9
0.9
10
5.0
2 ns
0.156
20
0.020 x 0.020
100
0.85
0.9
4
2
0.5 ns
0.622
20
0.020 x 0.020
100
0.8
0.9
0.5
0.5
100 ps
2.5
20
0.014 x 0.014
40
0.8
0.9
0.2
0.2
20 ps
10
20
0.014 x 0.014
40
A/W
A/W
nA
pF
Gb/Sec
V
Inches
um x um
鈥?/div>
Resp.
@ 1300nm
Resp.
@ 1550nm
V
R
@-5V
I
R
@
10uA
MXP4000 S
ERIES
MXP4000 S
ERIES
Copyright
錚?/div>
2000
MSC1639.PDF 2000-12-12
Microsemi
Opto Electronics Products Group
2830 S. Fairview Street, Santa Ana, CA 92704, (714) 979-8220 Fax (714)966-5256
http://www.microsemi.com/opto
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