The MXP1158 consists of a light emitting diode and an NPN phototransistor.
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The device is available in a hermetic 8-pin DIP package.
Electrical Characteristics @ 25
o
C
SYMBOL
IC(on)
VCEsat
BVceo
BVebo
ICE(off)
VF
IR
tR
tF
CHARCTERISTIC
On-State Collector Current
Saturation Voltage
Breakdown Voltage
Breakdown Voltage
Off-State Leakage Current
Input Forward Voltage
Input Reverse Current
Rise Time
Fall Time
CONDITIONS
IF = 1 mA, VCE = 5 Volts
IF = 2 mA, IC = 1.0 mA
IC = 1.0 mA
Ieb = 100 uA
VC = 20 Volts
IF = 10 mA
VR = 2.0 V
VCC = 10 Volts, RL = 100 Ohms
IF = 5 mA
Min
1.0
40
7
100
1.0
100.0
20
20
Max
8.0
0.3
UNITS
mAmps
Volts
Volts
Volts
nAmps
Volts
uAmps
usec
usec
Absolute Maximum Ratings
8
7
6
5
LED Input Diode
Reverse Voltage
Forward Voltage
Peak Forward Current
Power Dissipation
Input to Output Isolation
Storage Temperature Range
Operating Temperature Range
2.0 Vdc minimum @ IR = 10 uA
1.95 Vdc maximum @ IF = 100 mA
1.0 Amp @ 1 msec pulse width
200 mW
+/- 2,500 Vdc
-65 C to +150 C
-55 C to +125 C
1
2
3
4
Data Sheet # MSC1334.PDF
Updated: September 1999
Opto
Products
1
