MXP1144
SANTA ANA DIVISION
Photovoltaic By-Pass Diode
50 Volts, 1.0 Amps
P
RODUCT
P
REVIEW
KEY FEATURES
DESCRIPTION
W W W.
Microsemi
.COM
Large area diode chip for medium current photovoltaic by-
pass applications, or for higher current hybrid applications.
The device is rated for 1A for applications where the device
will be exposed to substantial radiation flux (space). For
other applications, it may be operated at higher currents. A
version with attached leads is available.
Oxide passivated structure for
very low leakage currents
Epitaxial structure minimizes
forward voltage drop
Triangular shape to fit in corner
near flat of photovoltaic cell
Forward voltage decreases with
radiation exposure
Targeted for terrestrial
applications with silicon
photovoltaic cells
Thin construction for fit with
photovoltaic cells
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFITS
Increases efficiency of
photovoltaic arrays
Protects photovoltaic cells from
reverse voltage
IMPORTANT:
For the most current data, consult
MICROSEMI鈥檚
website:
http://www.microsemi.com
MAXIMUM RATINGS @ 25
擄
C (UNLESS OTHERWISE SPECIFIED)
Description
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc鈮?135擄C
Junction Temperature Range
Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
I
F(ave)
T
j
T
stg
Max.
50
50
50
1.0
-65 to +150
-65 to +200
Unit
Volts
Volts
Volts
Amps
擄C
擄C
ELECTRICAL PARAMETERS
Description
Reverse (Leakage)
Current (in dark)
Forward Voltage
pulse test, pw= 300
碌s
Junction Capacitance
Breakdown Voltage
Symbol
IR
25
IR
25
VF1
VF2
Cj1
BVR
Conditions
VR= 4 Vdc, Ta= 25擄C
VR= 50 Vdc, Ta= 25擄C
IF= 400 mA, Ta= 25擄C
IF= 1.0 A, Ta= 25擄C
VR= 4 Vdc
IR= 200
碌A(chǔ),
Ta= 25擄C
Min
Typ.
10
20
750
770
1050
90
Max
200
775
800
1300
Unit
nA
nA
mV
mV
pF
V
MXP1144
MXP1144
50
Copyright
錚?/div>
2002
MXP1144.PDF, 2002-05-01
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
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