MXP1005
SANTA ANA DIVISION
Photovoltaic By-Pass Diode
120 Volts, 2.25 Amps
P
RODUCT
P
REVIEW
KEY FEATURES
DESCRIPTION
W W W.
Microsemi
.COM
Large area diode chip for medium current photovoltaic by-
pass applications, or for higher current hybrid applications.
The device is rated for 1A for applications where the device
will be exposed to substantial radiation flux (space). For
other applications, it may be operated at higher currents (see
graph for Vf vs. If). A version with attached leads is
available.
Gold diffused for low forward
voltage
Epitaxial structure minimizes
forward voltage drop
Forward voltage decreases with
radiation exposure
Qualified for space applications
Available in leaded configuration
High voltage for series
applications
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFITS
IMPORTANT:
For the most current data, consult
MICROSEMI鈥檚
website:
http://www.microsemi.com
Increases efficiency of
photovoltaic arrays
Protects photovoltaic cells from
reverse voltage
MAXIMUM RATINGS @ 25
擄
C (UNLESS OTHERWISE SPECIFIED)
Description
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc鈮?135擄C
Junction Temperature Range
Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
I
F(ave)
T
j
T
stg
Max.
120
120
120
2.25
-65 to +150
-65 to +200
Unit
Volts
Volts
Volts
Amps
擄C
擄C
ELECTRICAL PARAMETERS
Description
Reverse (Leakage)
Current (in dark)
Forward Voltage
pulse test, pw= 300
碌s
Junction Capacitance
Breakdown Voltage
Symbol
IR
25
IR
150
VF1
Cj1
BVR
Conditions
VR= 96 Vdc, Ta= 25擄C
VR= 96 Vdc, Ta= 150擄C
IF= 2. 25 A, Ta= 25擄C
VR= 4 Vdc
IR= 200
碌A(chǔ),
Ta= 25擄C
Min
Typ.
2
4
720
300
160
Max
10
8
840
600
Unit
碌A(chǔ)
mA
mV
pF
V
120
MXP1005
MXP1005
Copyright
錚?/div>
2002
MXP1005.PDF, 2002-05-03
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
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