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MXA-256-1 Datasheet

  • MXA-256-1

  • Optoelectronic

  • 1530.17KB

  • 11頁

  • ETC

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D A T A S H E E T
Lighting
Imaging
Telecom
Multiplexed InGaAs PIN Photodiode Array
MXA-256-1, 2 (800-1700 nm)
Multiplexed InGaAs PIN Photodiode
Array
Description
The MXA-256-X detector is a
hybrid focal plane Indium Gallium
Arsenide PIN photodiode array
with wavelength response ranging
from 800 nm to 1700 nm. The
array has 256 elements configured
in a linear orientation with
standard pixel height of 0.5 mm.
A buffered multiplexer provides
individual CMOS amplifiers for
each photodiode. The integrating
amplifier maintains zero volt bias
across each InGaAs photodiode,
minimizing dark current and low
frequency noise allowing for
longer exposure times with
increased sensitivity.
A static shift register scanning circuit
sequentially selects sample-and-hold
integrator output voltages which are
proportional to input optical power.
On-chip correlated double sampling
(samples are taken at the beginning
and end of integration, and are avail-
able at the output) removes integrator
offsets and further suppresses low fre-
quency noise. The array is available in
a 28 pin dual-in-line package.
Included in the assembly are a thermo-
electric cooler (鈭員 max > 60擄 C), silicon
multiplexer and bypass capacitors.
The MXA-256 series is available in two
classes, the MXA-256-1 and the MXA-
256-2. MXA-256-1 units exhibit no
pixel drop-outs, while the MXA-256-2
devices exhibit five or fewer drop-outs
(excluding the first and last pixels) that
occur non-consecutively.
Applications
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Fiber optics
DWDM power monitoring
NIR spectroscopy
NIR imaging
NIR astronomy
Far-field analysis
Features
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256 multiplexed elements
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High resolution (50 碌m pitch)
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Variable Exposure Time: 10 micro sec.
to 10 sec.
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Wide dynamic range (>39 dB)
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Correlated double sampling
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800 - 1700 nm frequency response
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User selectable integration time
www.perkinelmer.com/opto

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