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MX29LV400T/B

4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE

3V ONLY FLASH MEMORY

FEATURES

鈥?Extended single - supply voltage range 2.7V to 3.6V

鈥?524,288 x 8/262,144 x 16 switchable

鈥?Single power supply operation

- 3.0V only operation for read, erase and program

operation

鈥?Fast access time: 55R/70/90ns

鈥?Low power consumption

- 20mA maximum active current

- 0.2uA typical standby current

鈥?Command register architecture

- Byte/word Programming (9us/11us typical)

- Sector Erase (Sector structure 16K-Byte x 1,

8K-Byte x 2, 32K-Byte x1, and 64K-Byte x7)

鈥?Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors with

Erase Suspend capability.

- Automatically program and verify data at specified

address

鈥?Erase suspend/Erase Resume

- Suspends sector erase operation to read data from,

or program data to, any sector that is not being erased,

then resumes the erase.

鈥?Status Reply

- Data polling & Toggle bit for detection of program and

erase operation completion.

鈥?Ready/Busy pin (RY/BY)

- Provides a hardware method of detecting program or

erase operation completion.

鈥?Sector protection

- Hardware method to disable any combination of

sectors from program or erase operations

- Tempoary sector unprotect allows code changes in

previously locked sectors.

鈥?100,000 minimum erase/program cycles

鈥?Latch-up protected to 100mA from -1V to VCC+1V

鈥?Boot Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

鈥?Low VCC write inhibit is equal to or less than 2.3V

鈥?Package type:

- 44-pin SOP

- 48-pin TSOP

- 48-ball CSP

鈥?Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

GENERAL DESCRIPTION

The MX29LV400T/B is a 4-mega bit Flash memory or-

ganized as 512K bytes of 8 bits or 256K words of 16

bits. MXIC's Flash memories offer the most cost-effec-

tive and reliable read/write non-volatile random access

memory. The MX29LV400T/B is packaged in 44-pin

SOP, 48-pin TSOP and 48-ball CSP. It is designed to be

reprogrammed and erased in system or in standard

EPROM programmers.

The standard MX29LV400T/B offers access time as fast

as 55ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the MX29LV400T/B has separate chip enable (CE) and

output enable (OE) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV400T/B uses a command register to manage

this functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29LV400T/B uses a 2.7V~3.6V VCC sup-

ply to perform the High Reliability Erase and auto Pro-

gram/Erase algorithms.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

P/N:PM0710

REV. 1.4, NOV. 23, 2001

1

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