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MX29F1610TC-10 Datasheet

  • MX29F1610TC-10

  • x8/x16 Flash EEPROM

  • 37頁(yè)

  • ETC

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MX29F1610
16M-BIT [2M x 8/1M x 16] CMOS
SINGLE VOLTAGE FLASH EEPROM
FEATURES
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5V
鹵
10% write and erase
JEDEC-standard EEPROM commands
Endurance:10,000 cycles
Fast access time: 100/120ns
Sector erase architecture
- 16 equal sectors of 128k bytes each
- Sector erase time: 150ms typical
Auto Erase and Auto Program Algorithms
- Automatically erases any one of the sectors or the
whole chip with Erase Suspend capability
- Automatically programs and verifies data at specified
addresses
Status Register feature for detection of program or
erase cycle completion
Low VCC write inhibit is equal to or less than 3.2V
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Software and hardware data protection
Page program operation
- Internal address and data latches for 128 bytes/64
words per page
- Page programming time: 3ms typical
- Byte programming time: 24us in average
Low power dissipation
- 50mA active current
- 100uA standby current
CMOS and TTL compatible inputs and outputs
Two independently Protected sectors
Deep Power-Down Input
- 1uA ICC typical
Industry standard surface mount packaging
- 48 lead TSOP, TYPE I
- 44 lead SOP
GENERAL DESCRIPTION
The MX29F1610 is a 16-mega bit Flash memory organized
as either 1M wordx16 or 2M bytex8. The MX29F1610
includes 16-128KB(131,072) blocks or 16-64KW(65,536)
blocks. MXIC's Flash memories offer the most cost-
effective and reliable read/write non-volatile random
access memory. The MX29F1610 is packaged in 48-pin
TSOP or 44-pin SOP. For 48-pin TSOP, CE2 and RY/
BY are extra pins compared with 44-pin SOP package.
This is to optimize the products (such as solid-state disk
drives or flash memory cards) control pin budget. PWD
is available in 48 -pin TSOP for low power environment.
All the above three pins(CE2,RY/BY and PWD) plus one
extra VCC pin are not provided in 44-pin SOP. It is
designed to be reprogrammed and erased in-system or
in-standard EPROM programmers.
The standard MX29F1610 offers access times as fast
as 100ns, allowing operation of high-speed
microprocessors without wait. To eliminate bus
contention, the MX29F1610 has separate chip
enables(CE1 and CE2), output enable (OE), and write
enable (WE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29F1610 uses a command register to manage this
functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining
maximum EPROM compatibility.
To allow for simple in-system reprogrammability, the
MX29F1610 does not require high input voltages for
programming. Five-volt-only commands determine the
operation of the device. Reading data out of the device
is similar to reading from an EPROM.
MXIC Flash technology reliably stores memory contents
even after 10,000 cycles. The MXIC's cell is designed
to optimize the erase and programming mechanisms.
In addition, the combination of advanced tunnel oxide
processing and low internal electric fields for erase and
programming operations produces reliable cycling. The
MX29F1610 uses a 5V
鹵
10% VCC supply to perform
the Auto Erase and Auto Program algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up
protection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC +1V.
P/N:PM0260
REV. 2.3, APR. 16, 1999
1
This Material Copyrighted by Its Respective Manufacturer

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