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262,144x 8 only

Fast access time: 55/70/90/120ns

Low power consumption

- 30mA maximum active current(5MHz)

- 1uA typical standby current

Programming and erasing voltage 5V 鹵 10%

Command register architecture

- Byte Programming (7us typical)

- Sector Erase (16K-Byte x1, 8K-Byte x 2, 32K-Byte

x1, and 64K-Byte x 3)

Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors or the

whole chip with Erase Suspend capability.

- Automatically programs and verifies data at specified

address

Erase Suspend/Erase Resume

- Suspends an erase operation to read data from, or

program data to, a sector that is not being erased, then

resumes the erase operation.

Status Reply

- Data polling & Toggle bit for detection of program and

erase cycle completion.

Sector protection

- Hardware method to disable any combination of

sectors from program or erase operations

- Sector protect/unprotect for 5V only system or 5V/

12V system

100,000 minimum erase/program cycles

Latch-up protected to 100mA from -1 to VCC+1V

Boot Code Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

Hardware RESET pin(only for 29F002T/B)

- Resets internal state machine to read mode

Low VCC write inhibit is equal to or less than 3.2V

Package type:

- 32-pin PDIP

- 32-pin PLCC

- 32-pin TSOP (Type 1)

20 years data retention

鈥?/div>

GENERAL DESCRIPTION

The MX29F002T/B is a 2-mega bit Flash memory organ-

ized as 256K bytes of 8 bits only. MXIC's Flash memories

offer the most cost-effective and reliable read/write non-

volatile random access memory. The MX29F002T/B is

packaged in 32-pin PDIP,PLCC and 32-pin TSOP(I). It is

designed to be reprogrammed and erased in-system or in-

standard EPROM programmers.

The standard MX29F002T/B offers access time as fast as

55ns, allowing operation of high-speed microprocessors

without wait states. To eliminate bus contention, the

MX29F002T/B has separate chip enable (CE) and output

enable (OE) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F002T/B uses a command register to manage this

functionality. The command register allows for 100% TTL

level control inputs and fixed power supply levels during

erase and programming, while maintaining maximum

EPROM compatibility.

MXIC's Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields for

erase and programming operations produces reliable

cycling. The MX29F002T/B uses a 5.0V 鹵 10% VCC

supply to perform the High Reliability Erase and auto

Program/Erase algorithms.

The highest degree of latch-up protection is achieved with

MXIC's proprietary non-epi process. Latch-up protection

is proved for stresses up to 100 milliamps on address and

data pin from -1V to VCC + 1V.

P/N: PM0547

1

REV. 1.1, JUN. 14, 2001

型號(hào)

版本

描述

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