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MX043J Datasheet

  • MX043J

  • RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE...

  • 4頁

  • MICROSEMI

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2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MX043J
MX043G
200 Volts
44 Amps
50 m鈩?/div>
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Harris FSC260R die
total dose: 100 kRAD(Si) within pre-radiation parameter limits
dose rate: 3 x 10
9
RAD(Si)/sec @ 80%BV
DSS
typical
dose rate: 2 x 10
12
RAD(Si)/sec @ ID
鈮?/div>
IDM typical
neutron: 10
13
neutrons/cm
2
within pre-radiation parameter limits
photocurrent: 17 nA/RAD(Si)/sec typical
rated Safe Operating Area Curve for Single event Effects
rugged polysilicon gate cell structure with ultrafast body diode
low inductance surface mount power package available with 鈥淛-leads鈥?/div>
(MX043J) or 鈥済ullwing-leads鈥?(MX043G)
鈥?/div>
very low thermal resistance
鈥?/div>
reverse polarity available upon request add suffix 鈥淩鈥漵t
Maximum Ratings @ 25擄 (unless otherwise
C
specified)
DESCRIPTION
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ T
J
鈮?/div>
25擄
C
RADIATION
HARDENED
SEGR-RESISTANT
N-CHANNEL
ENHANCEMENT
MODE
POWER MOSFET
SYMBOL
BV
DSS
BV
DGR
V
GS
V
GSM
I
D25
I
D100
I
DM
I
AR
E
AR
E
AS
P
D
T
j
T
stg
I
S
I
SM
胃
JC
-
MAX.
200
200
+/-20
+/-30
44
28
132
44
tbd
tbd
300
-55 to +125
-55 to +125
44
132
0.25
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
Amps
mJ
mJ
Watts
擄
C
擄
C
Amps
Amps
擄
C/W
grams
VDSmax
200V
200V
160V
100V
40V
Drain-to-Gate Breakdown Voltage
@ T
J
鈮?/div>
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
25擄 R
GS
= 1 M鈩?/div>
C,
Tj= 25擄
C
Tj= 100擄
C
Peak Drain Current, pulse width limited by T
Jmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
Weight
SINGLE EVENT
EFFECTS
SAFE
OPERATING
AREA
(SEESOA)
Ion Species
Ni
Br
Br
Br
Br
typical LET (MeV/mg/cm)
26
37
37
37
37
Notes
(1)
(2)
typical range (碌)
43
36
36
36
36
VGS
-20V
-5V
-10V
-15V
-20V
Pulse test, t
鈮?/div>
300
碌
s, duty cycle
未鈮?/div>
2%
Microsemi Corp. does not manufacture the mosfet die; contact company for details.
Datasheet# MSC0857

MX043J相關(guān)型號PDF文件下載

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