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Harris FSC260R die

total dose: 100 kRAD(Si) within pre-radiation parameter limits

dose rate: 3 x 10

9

RAD(Si)/sec @ 80%BV

DSS

typical

dose rate: 2 x 10

12

RAD(Si)/sec @ ID

鈮?/div>

IDM typical

neutron: 10

13

neutrons/cm

2

within pre-radiation parameter limits

photocurrent: 17 nA/RAD(Si)/sec typical

rated Safe Operating Area Curve for Single event Effects

rugged polysilicon gate cell structure with ultrafast body diode

low inductance surface mount power package available with 鈥淛-leads鈥?/div>

(MX043J) or 鈥済ullwing-leads鈥?(MX043G)

鈥?/div>

very low thermal resistance

鈥?/div>

reverse polarity available upon request add suffix 鈥淩鈥漵t

Maximum Ratings @ 25擄 (unless otherwise

C

specified)

DESCRIPTION

Drain-to-Source Breakdown Voltage (Gate Shorted to Source)

@ T

J

鈮?/div>

25擄

C

RADIATION

HARDENED

SEGR-RESISTANT

N-CHANNEL

ENHANCEMENT

MODE

POWER MOSFET

SYMBOL

BV

DSS

BV

DGR

V

GS

V

GSM

I

D25

I

D100

I

DM

I

AR

E

AR

E

AS

P

D

T

j

T

stg

I

S

I

SM

胃

JC

-

MAX.

200

+/-20

+/-30

44

28

132

44

tbd

300

-55 to +125

44

132

0.25

UNIT

Volts

Amps

mJ

Watts

擄

C

擄

C

Amps

擄

C/W

grams

VDSmax

200V

160V

100V

40V

Drain-to-Gate Breakdown Voltage

@ T

J

鈮?/div>

Continuous Gate-to-Source Voltage

Transient Gate-to-Source Voltage

Continuous Drain Current

25擄 R

GS

= 1 M鈩?/div>

C,

Tj= 25擄

C

Tj= 100擄

C

Peak Drain Current, pulse width limited by T

Jmax

Repetitive Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Power Dissipation

Junction Temperature Range

Storage Temperature Range

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode)

Thermal Resistance, Junction to Case

Weight

SINGLE EVENT

EFFECTS

SAFE

OPERATING

AREA

(SEESOA)

Ion Species

Ni

Br

typical LET (MeV/mg/cm)

26

37

Notes

(1)

(2)

typical range (碌)

43

36

VGS

-20V

-5V

-10V

-15V

-20V

Pulse test, t

鈮?/div>

300

碌

s, duty cycle

未鈮?/div>

2%

Microsemi Corp. does not manufacture the mosfet die; contact company for details.

Datasheet# MSC0857

型號

版本

描述

廠商

下載
MX043G

英文版

RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE...

MICROSEMI

MX043G
MX043G

英文版

RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE...

MICROSEMI ...

MX043G
MX043J

英文版

RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE...

MICROSEMI

MX043J
MX043J

英文版

RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE...

MICROSEMI ...

MX043J
MX043GR

英文版

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 44A I(D) |...

ETC

MX043GR
MX043JR

英文版

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 44A I(D) |...

ETC

MX043JR
MX040-20

英文版

ELP EXTRA LOW PROFILE STANDARD RECTIFIER

MICROSEMI

MX040-20
MX040-20

英文版

ELP EXTRA LOW PROFILE STANDARD RECTIFIER

MICROSEMI ...

MX040-20

MX043G Datasheet

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