Advanced Technical Information
MWI 80-12 T6K
I
C25
= 80 A
= 1200 V
V
CES
V
CE(sat) typ.
= 2.0 V
IGBT Module
Sixpack
Short Circuit SOA Capability
Square RBSOA
10, 23
14
13
NTC
18
17
22
21
11, 12
15, 16
19, 20
8
7
6
5
9, 24
4
3
2
1
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
P
tot
T
C
= 25擄C
T
C
= 80擄C
V
GE
=
鹵
15 V; R
G
= 18
鈩?
T
VJ
= 125擄C
RBSOA; clamped inductive load; L = 100 碌H
V
CE
= 900 V; V
GE
=
鹵
15 V; R
G
= 18
鈩?
T
VJ
= 125擄C
SCSOA; non-repetitive
T
C
= 25擄C
Conditions
T
VJ
= 25擄C to 150擄C
Maximum Ratings
1200
鹵
20
80
56
100
V
CES
10
270
V
V
A
A
A
碌s
W
Features
鈥?Trench IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant
circuits
鈥?HiPerFRED
TM
diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
鈥?Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
Symbol
Conditions
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
2.0
2.3
4.5
0.8
400
90
50
520
90
5
6.5
3600
470
0.2
2.4
6.5
1
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
0.46 K/W
K/W
Typical Applications
鈥?AC drives
鈥?power supplies with power factor
correction
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
R
thCH
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25擄C
T
VJ
= 125擄C
I
C
= 2 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
CE
= 0 V; V
GE
=
鹵
20 V
Inductive load, T
VJ
= 125擄C
V
CE
= 600 V; I
C
= 50 A
V
GE
= 鹵15 V; R
G
= 18
鈩?/div>
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 50 A
(per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2005 IXYS All rights reserved
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IXYS
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