CE(sat) typ.
鈮?/div>
V
CES
10
500
V
V
A
A
A
碌s
W
Features
鈥?IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current for optimized
performance also in resonant circuits
鈥?HiPerFRED
TM
diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
鈥?Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
V
CE
= 900 V; V
GE
=
鹵
15 V; R
G
= 15
鈩?
T
VJ
= 125擄C
non-repetitive
T
C
= 25擄C
Typical Applications
Symbol
Conditions
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
2.0
2.2
4.5
1.1
400
150
60
680
50
9.0
7.5
5.7
0.75
2.5
6.5
1.1
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
碌C
0.25 K/W
142
鈥?AC drives
鈥?power supplies with power factor
correction
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 75 A; V
GE
= 15 V; T
VJ
= 25擄C
T
VJ
= 125擄C
I
C
= 3 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
CE
= 0 V; V
GE
=
鹵
20 V
Inductive load, T
VJ
= 125擄C
V
CE
= 600 V; I
C
= 75 A
V
GE
= 鹵15 V; R
G
= 15
鈩?/div>
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600V; V
GE
= 15 V; I
C
= 75 A
(per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2001 IXYS All rights reserved
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