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MWI100-12E8 Datasheet

  • MWI100-12E8

  • IGBT Modules

  • 2頁(yè)

  • IXYS   IXYS

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Advanced Technical Information
MWI 100-12 E8
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13, 21
I
C25
= 165 A
= 1200 V
V
CES
V
CE(sat) typ.
= 2.0 V
1
2
5
6
9
10
19
17
15
3
4
14, 20
7
8
11
12
B3
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
RBSOA
t
SC
(SCSOA)
P
tot
T
C
= 25擄C
T
C
= 80擄C
V
GE
=
鹵
15 V; R
G
= 10
鈩?
T
VJ
= 125擄C
Clamped inductive load; L = 100 碌H
Conditions
T
VJ
= 25擄C to 150擄C
Maximum Ratings
1200
鹵
20
165
115
I
CM
= 200
V
CEK
鈮?/div>
V
CES
10
640
V
V
A
A
A
碌s
W
Features
鈥?IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current for optimized
performance also in resonant circuits
鈥?HiPerFRED
TM
diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
鈥?Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
V
CE
= 900 V; V
GE
=
鹵
15 V; R
G
= 10
鈩?
T
VJ
= 125擄C
non-repetitive
T
C
= 25擄C
Typical Applications
Symbol
Conditions
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
2.0
2.2
4.5
1.4
400
150
60
680
50
12
10
7.4
1
2.5
6.5
1.4
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
碌C
0.19 K/W
142
鈥?AC drives
鈥?power supplies with power factor
correction
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 100 A; V
GE
= 15 V; T
VJ
= 25擄C
T
VJ
= 125擄C
I
C
= 4 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
CE
= 0 V; V
GE
=
鹵
20 V
Inductive load, T
VJ
= 125擄C
V
CE
= 600 V; I
C
= 100 A
V
GE
= 鹵15 V; R
G
= 10
鈩?/div>
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600V; V
GE
= 15 V; I
C
= 100 A
(per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2001 IXYS All rights reserved
1-2

MWI100-12E8 產(chǎn)品屬性

  • 5

  • 半導(dǎo)體模塊

  • IGBT

  • -

  • NPT

  • 三相反相器

  • 1200V

  • 2.5V @ 15V，100A

  • 165A

  • 1.4mA

  • 7.4nF @ 25V

  • 640W

  • 標(biāo)準(zhǔn)型

  • 無(wú)

  • 底座安裝

  • E3

  • E3

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