MICRO
ELECTRO NICS
MWB51TA-DI
MWB51TB-DI
MWB51TK-DI
ULTRA HIGH
BRIGHTNESS
WHITE LED LAMP
DESCRIPTION
MWB51TX-DI is an ultra high
brightness
InGaN/GaN white LED lamp encapsulated
in a 5mm diameter clear transparent lens .
ABSOLUTE MAXIMUM RATINGS
Power Dissipation @ Ta=25擄C
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature (1/16" from body)
ELECTRO-OPTICAL CHARACTERISTICS
PARAMETER
Forward Voltage
Reverse Breakdown Voltage
MWB51TA-DI
Luminous Intensity
(Ta=25擄C)
TYP
3.5
MAX
4.5
UNIT
V
V
mcd
mcd
mcd
degree
degree
degree
125mW
30mA
5V
-20 to +80擄C
-30 to +100擄C
260擄C for 5 sec.
CONDITIONS
IF=20mA
IR=100碌A(chǔ)
3800
IF=20mA
MWB51TB-DI
3500
IF=20mA
MWB51TK-DI
1800
IF=20mA
MWB51TA-DI
20
IF=20mA
Viewing Angle
MWB51TB-DI
30
IF=20mA
MWB51TK-DI
70
IF=20mA
Chromaticity Coordinates
0.30
IF=20mA
0.30
IF=20mA
CAUTION
REV錛欳
Static eletricity and surge damages the LED ,It is recommended to use a wrist band or anti-eletrostatic glove
when handling the LED . All devices,equipment and machinery must be properly grounded.
MICRO ELECTRONICS LTD.
7/F, Enterprise Square Three,39 Wang Chiu Road, Kowloon Bay, Kowloon, Hong Kong.
Tel : (852) 2343 0181 Fax: (852) 2341 0321 Website : www.microelectr.com.hk
SYMBOL MIN
VF
BVR
5
IV
2500
IV
2000
IV
1000
2胃 1/2
2胃 1/2
2胃 1/2
x
y
15/8/2003
1
