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MW6S004NT1 Datasheet

  • MW6S004NT1

  • RF Power Field Effect Transistor

  • 487.87KB

  • 12頁

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MW6S004N
Rev. 1, 4/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for Class A or Class AB base station applications with frequencies
up to 2000 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
鈥?/div>
Typical Two - Tone Performance @ 1960 MHz, 28 Volts, I
DQ
= 50 mA,
P
out
= 4 Watts PEP
Power Gain 鈥?18 dB
Drain Efficiency 鈥?33%
IMD 鈥?- 34 dBc
鈥?/div>
Typical Two - Tone Performance @ 900 MHz, 28 Volts, I
DQ
= 50 mA,
P
out
= 4 Watts PEP
Power Gain 鈥?19 dB
Drain Efficiency 鈥?33%
IMD 鈥?- 39 dBc
鈥?/div>
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output
Power
Features
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
On - Chip RF Feedback for Broadband Stability
鈥?/div>
Integrated ESD Protection
鈥?/div>
RoHS Compliant
鈥?/div>
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MW6S004NT1
1 - 2000 MHz, 4 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 466 - 03, STYLE 1
PLD 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
T
stg
T
J
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
Unit
Vdc
Vdc
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 76擄C, 4 W PEP, Two - Tone
Case Temperature 79擄C, 4 W CW
Symbol
R
胃JC
Value (1,2)
8.8
8.5
Unit
擄C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1A (Minimum)
A (Minimum)
III (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
錚?/div>
Freescale Semiconductor, Inc., 2006. All rights reserved.
MW6S004NT1
1
RF Device Data
Freescale Semiconductor

MW6S004NT1 產(chǎn)品屬性

  • 1,000

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 1.96GHz

  • 18dB

  • 28V

  • 10µA

  • -

  • 50mA

  • 4W

  • 68V

  • PLD-1.5

  • PLD-1.5

  • 帶卷 (TR)

  • MW6S004NT1-NDMW6S004NT1TR

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