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MW4IC915GNBR1 Datasheet

  • MW4IC915GNBR1

  • RF LDMOS Wideband Integrated Power Amplifiers

  • 20頁

  • FREESCALE

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Freescale Semiconductor
Technical Data
MW4IC915N
Rev. 7, 5/2006
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC915NB/GNB wideband integrated circuit is designed for GSM
and GSM EDGE base station applications. It uses Freescale鈥檚 newest High
Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage
structure. Its wideband On- Chip design makes it usable from 750 to 1000 MHz.
The linearity performances cover all modulations for cellular applications: GSM,
GSM EDGE, TDMA, N - CDMA and W - CDMA.
Final Application
鈥?/div>
Typical Performance: V
DD
= 26 Volts, I
DQ1
= 60 mA, I
DQ2
= 240 mA,
P
out
= 15 Watts CW, Full Frequency Band (860 - 960 MHz)
Power Gain 鈥?30 dB
Power Added Efficiency 鈥?44%
Driver Application
鈥?/div>
Typical GSM/GSM EDGE Performances: V
DD
= 26 Volts, I
DQ1
= 60 mA,
I
DQ2
= 240 mA, P
out
= 3 Watts Avg., Full Frequency Band (869 - 894 MHz
and 921 - 960 MHz)
Power Gain 鈥?31 dB
Power Added Efficiency 鈥?19%
Spectral Regrowth @ 400 kHz Offset = - 65 dBc
Spectral Regrowth @ 600 kHz Offset = - 83 dBc
EVM 鈥?1.5%
鈥?/div>
Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW
Output Power
Features
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
鈥?/div>
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
鈥?/div>
On - Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
鈥?/div>
Integrated ESD Protection
鈥?/div>
200擄C Capable Plastic Package
鈥?/div>
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
V
RD2
V
RG2
V
DS1
RF
in
V
RD1
V
RG1
V
GS1
V
GS2
V
DS2
/RF
out
MW4IC915NBR1
MW4IC915GNBR1
860 - 960 MHz, 15 W, 26 V
GSM/GSM EDGE, N - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC915NBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC915GNBR1
GND
V
RD2
V
RG2
V
DS1
V
RD1
RF
in
V
RG1
V
GS1
V
GS2
NC
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
14
RF
out/
V
DS2
13
12
NC
GND
Quiescent Current
Temperature Compensation
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987/D,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
漏
Freescale Semiconductor, Inc., 2006. All rights reserved.
MW4IC915NBR1 MW4IC915GNBR1
1
RF Device Data
Freescale Semiconductor

MW4IC915GNBR1 產(chǎn)品屬性

  • RF Devices Discontinuation 28/Jun/2011

  • 500

  • RF/IF 和 RFID

  • RF 放大器

  • -

  • 750MHz ~ 1GHz

  • -

  • 30dB

  • -

  • 手機(jī)，CDMA，EDGE，GSM，TDMA，W-CDMA

  • 26V

  • 60mA

  • -

  • TO-272-16 變型，鷗翼

  • 帶卷 (TR)

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