鈥?/div>
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance 鈥?10%
Complete Typical Design Curves
2
Cathode
TO鈥?2
1
Anode
MARKING
DIAGRAM
3
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Forward Power Dissipation
@ TA = 25擄C
MMBV21xx
Derate above 25擄C
@ TA = 25擄C
Derate above 25擄C
Junction Temperature
Storage Temperature Range
MV21xx
LV22xx
TJ
Tstg
Symbol
VR
IF
PD
225
1.8
280
2.8
+150
鈥?5 to +150
擄C
擄C
1
Value
30
200
Unit
Vdc
mAdc
mW
mW/擄C
1
2
XXX M
TO鈥?36AB, SOT鈥?3
CASE 318鈥?8
STYLE 8
XXX
= Device Code*
M
= Date Code
* See Table
XX
XXXX
YWW
DEVICE MARKING
MMBV2101LT1 = M4G
MMBV2103LT1 = 4H
MMBV2105LT1 = 4U
MMBV2107LT1 = 4W
MMBV2108LT1 = 4X
MMBV2109LT1 = 4J
MV2101 = MV2101
MV2105 = MV2105
MV2109 = MV2109
LV2205 = LV2205
LV2209 = LV2209
2
TO鈥?26AC, TO鈥?2
CASE 182
STYLE 1
XX
= Device Code Line 1*
XXXX = Device Code Line 2*
M
= Date Code
* See Table
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10
碌A(chǔ)dc)
MMBV21xx, MV21xx
LV22xx
Reverse Voltage Leakage
Current
(VR = 25 Vdc, TA = 25擄C)
Diode Capacitance
Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
Symbol
V(BR)R
30
25
IR
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.1
碌A(chǔ)dc
Min
Typ
Max
Unit
Vdc
Preferred
devices are recommended choices for future use
and best overall value.
TCC
鈥?/div>
280
鈥?/div>
ppm/擄C
漏
Semiconductor Components Industries, LLC, 2001
1
October, 2001 鈥?Rev. 3
Publication Order Number:
MMBV2101LT1/D
next
MV2109 產(chǎn)品屬性
ON Semiconductor
變?nèi)荻O管
29.7 pF
30 V
Through Hole
TO-92-2
Bulk
Single
+ 150 C
- 55 C
2.5
Through Hole
1000
2 / 30
MV2109相關(guān)型號(hào)PDF文件下載