MV1807J1
SILICON VARACTOR DIODE
DESCRIPTION:
The
ASI MV1807J1
is a Diffused
Epitaxial Varactor Diode Designed for
Multiplier Applications.
PACKAGE STYLE DO-4
MAXIMUM RATINGS
I
V
P
DISS
T
J
T
STG
胃
JC
O
O
100 mA
80 V
21 W @ T
C
= 25 C
-65 C to +150 C
-65 C to +175 C
6.0 C/W
O
O
O
O
Cathode to case
CHARACTERISTICS
SYMBOL
V
B
C
T
R
S
F
OUT
P
OUT
F
IN
P
IN
I
R
= 10
碌A(chǔ)
V
R
= 6.0 V
V
R
= 6.0 V
T
C
= 25 C
O
NONE
TEST CONDITIONS
f = 1.0 MHz
f = 50 MHz
MINIMUM
80
10.8
TYPICAL
MAXIMUM
13.2
UNITS
V
pF
Ohms
MHz
W
MHz
W
0.25
1000
25.1
500
37.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
鈥?/div>
NORTH HOLLYWOOD, CA 91605
鈥?/div>
(818) 982-1202
鈥?/div>
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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