鈭?/div>
Guaranteed
鹵
1.0% (Max) Over Specified Tuning Range
MV104
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE
w
This device is available in Pb鈭抐ree package(s). Specifications herein
apply to both standard and Pb鈭抐ree devices. Please see our website at
www.onsemi.com for specific Pb鈭抐ree orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
1
2
3
CASE 29
鈭?1,
STYLE 15
TO鈭?2 (TO
鈭?26AA)
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Total Power Dissipation @ T
A
= 25擄C
Derate above 25擄C
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
P
D
T
J
T
stg
Value
32
200
280
2.8
+125
鈭?5
to +150
Unit
Vdc
mAdc
mW
mW/擄C
擄C
擄C
Pin 1
A1
Pin 2
C
Pin 3
A2
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
(EACH DIODE)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
渭Adc)
Reverse Voltage Leakage Current T
A
= 25擄C
(V
R
= 30 Vdc)
T
A
= 60擄C
Diode Capacitance Temperature Coefficient
(V
R
= 4.0 Vdc, f = 1.0 MHz)
C
T
, Diode Capacitance
V
R
= 3.0 Vdc, f = 1.0 MHz
pF
Device
MV104
Min
37
Max
42
Symbol
V
(BR)R
I
R
TC
C
Min
32
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
280
Max
鈥?/div>
50
500
鈥?/div>
Unit
Vdc
nAdc
ppm/擄C
Q, Figure of Merit
V
R
= 3.0 Vdc
f = 100 MHz
Min
100
Typ
140
C
R
, Capacitance Ratio
C
3
/C
30
f = 1.0 MHz
Min
2.5
Max
2.8
漏
Semiconductor Components Industries, LLC, 2006
March, 2006
鈭?/div>
Rev. 4
1
Publication Order Number:
MV104/D
MV104_06相關(guān)型號PDF文件下載
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型號
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描述
廠商
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