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MUN5314DW1T1 Datasheet

  • MUN5314DW1T1

  • Dual Bias Resistor Transistors

  • 368.74KB

  • 13頁(yè)

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LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base鈥揺mitter resistor. These digital tran-
sistors are designed to replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single device. In the
MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT鈥?63 package
which is ideal for low power surface mount applications where board space is at a premium.
鈥?Simplifies Circuit Design
鈥?Reduces Board Space
鈥?Reduces Component Count
鈥?Available in 8 mm, 7 inch/3000 Unit Tape and Reel
1
2
3
MUN5311DW1T1
Series
6
5
4
SOT-363
CASE 419B STYLE1
MAXIMUM RATINGS
(T
A
= 25擄C unless otherwise noted, common for Q
1
6
5
4
and Q
2
, 鈥?minus sign for Q
1
(PNP) omitted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance 鈥?/div>
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance 鈥?/div>
Junction-to-Ambient
Thermal Resistance 鈥?/div>
Junction-to-Lead
Junction and Storage
Temperature
1. FR鈥? @ Minimum Pad
Symbol Value
V
CBO
50
V
CEO
50
I
C
100
Unit
Vdc
Vdc
mAdc
Q
2
R
2
R
1
1
2
R
1
R
2
Q
1
3
Symbol
P
D
Max
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
Unit
mW
mW/擄C
擄C/W
MARKING DIAGRAM
6
5
4
XX
1
2
3
R
胃JA
670 (Note 1.)
490 (Note 2.)
xx = Device Marking
=
(See Page 2)
Symbol
P
D
Max
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
擄C/W
擄C
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
R
胃JA
R
胃JL
T
J
, T
stg
2. FR鈥? @ 1.0 x 1.0 inch Pad
MUN5311dw鈥?/13

MUN5314DW1T1 產(chǎn)品屬性

  • ON Semiconductor

  • Transistors Switching (Resistor Biased)

  • Dual

  • NPN/PNP

  • 10 KOhms

  • 0.21

  • SMD/SMT

  • SC-88-6

  • 50 V

  • 0.1 A

  • 100 mA

  • 187 mW

  • + 150 C

  • Reel

  • - 55 C

  • 3000

MUN5314DW1T1相關(guān)型號(hào)PDF文件下載

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  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    LRC
  • 英文版
    Dual Bias Resistor Trasnsistors
    MOTOROLA
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...
  • 英文版
    Dual Bias Resistor Transistors
    LRC [Lesha...
  • 英文版
    Dual Bias Resistor Trasnsistors
    MOTOROLA [...
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI
  • 英文版
    Dual Bias Resistor Transistors
    ONSEMI [ON...

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