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MUN5313DW1T1 Datasheet

  • MUN5313DW1T1

  • Dual Bias Resistor Transistors

  • 34頁

  • ONSEMI

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MUN5311DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base鈭抏mitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5311DW1T1 series,
two complementary BRT devices are housed in the SOT鈭?63 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
(3)
R
1
Q
1
Q
2
R
2
(4)
R
1
(5)
(6)
http://onsemi.com
(2)
R
2
(1)
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
Pb鈭扚ree Package is Available
6
1
SOT鈭?63
CASE 419B
STYLE 1
MAXIMUM RATINGS
(T
A
= 25擄C unless otherwise noted, common for Q
1
and Q
2
, 鈭?minus sign for Q
1
(PNP) omitted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
MARKING DIAGRAM
6
XX
d
1
XX = Specific Device Code
d
= Date Code
=
(See Page 2)
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance 鈭?/div>
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance 鈭?/div>
Junction-to-Ambient
Thermal Resistance 鈭?/div>
Junction-to-Lead
Junction and Storage Temperature
1. FR鈭? @ Minimum Pad
2. FR鈭? @ 1.0 x 1.0 inch Pad
漏
Semiconductor Components Industries, LLC, 2004
Symbol
P
D
Max
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
670 (Note 1)
490 (Note 2)
Max
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
493 (Note 1)
325 (Note 2)
188 (Note 1)
208 (Note 2)
鈭?5 to +150
Unit
mW
mW/擄C
擄C/W
R
qJA
ORDERING AND DEVICE MARKING
INFORMATION
See detailed ordering, shipping, and specific marking
information in the table on page 2 of this data sheet.
Symbol
P
D
Unit
mW
mW/擄C
擄C/W
擄C/W
擄C
Preferred
devices are recommended choices for future use
and best overall value.
R
qJA
R
qJL
T
J
, T
stg
1
September, 2004 鈭?Rev. 9
Publication Order Number:
MUN5311DW1T1/D

MUN5313DW1T1 產品屬性

  • 3,000

  • 分離式半導體產品

  • 晶體管(BJT) - 陣列﹐預偏壓式

  • -

  • 1 個 NPN，1 個 PNP - 預偏壓式（雙）

  • 100mA

  • 50V

  • 47k

  • 47k

  • 80 @ 5mA，10V

  • 250mV @ 300µA，10mA

  • 500nA

  • -

  • 250mW

  • 表面貼裝

  • 6-TSSOP，SC-88，SOT-363

  • SOT-363

  • 帶卷 (TR)

MUN5313DW1T1相關型號PDF文件下載

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